NCEP40P60Q MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCEP40P60Q
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 75 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 60 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 4 nS
Cossⓘ - Capacitancia de salida: 660 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.017 Ohm
Paquete / Cubierta: DFN3.3X3.3-8L
Búsqueda de reemplazo de NCEP40P60Q MOSFET
NCEP40P60Q Datasheet (PDF)
ncep40p60q.pdf

http://www.ncepower.comNCEP40P60QNCE P-Channel Super Trench Power MOSFETDescriptionThe NCEP40P60Q uses Super Trench technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =-40V,I =-60ADS Dswitching performance. Both conduction and switching power R =8.8m (typical) @ V =-10VDS(ON) GSlosses are minimized due to an extremely lo
ncep40p60k.pdf

http://www.ncepower.comNCEP40P60KNCE P-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEP40P60K uses Super Trench technology that is V =-40V,I =-60ADS Duniquely optimized to provide the most efficient high frequencyR =8.8m (typical) @ V =-10VDS(ON) GSswitching performance. Both conduction and switching powerR =12.5m (typical) @ V =-4.5VDS(ON) G
ncep40p60g.pdf

http://www.ncepower.comNCEP40P60GNCE P-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEP40P60G uses Super Trench technology that is V =-40V,I =-60ADS Duniquely optimized to provide the most efficient high frequencyR =8.8m (typical) @ V =-10VDS(ON) GSswitching performance. Both conduction and switching powerR =12.5m (typical) @ V =-4.5VDS(ON) G
ncep40p65gu.pdf

http://www.ncepower.comNCEP40P65GUNCE P-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEP40P65GU uses Super Trench technology that is V =-40V,I =-65ADS Duniquely optimized to provide the most efficient high frequencyR =7.8m (typical) @ V =-10VDS(ON) GSswitching performance. Both conduction and switching powerR =11.5m (typical) @ V =-4.5VDS(ON)
Otros transistores... NCEP4090AGU , NCEP4090GU , NCEP40P07S , NCEP40P30K , NCEP40P30Q , NCEP40P35GU , NCEP40P60G , NCEP40P60K , AO4407 , NCEP40P65GU , NCEP40P65QU , NCEP40P80G , NCEP40PT12K , NCEP40PT13D , NCEP40PT13GU , NCEP40PT15G , NCEP40PT30VD .
History: TT8K11 | 2SK2596 | APQ0DSN60AJ | NP82N055NHE | BSO200P03S
History: TT8K11 | 2SK2596 | APQ0DSN60AJ | NP82N055NHE | BSO200P03S



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