NCEP40P65GU MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCEP40P65GU
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 85 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 65 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 4 nS
Cossⓘ - Capacitancia de salida: 660 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.016 Ohm
Paquete / Cubierta: DFN5X6-8L
Búsqueda de reemplazo de NCEP40P65GU MOSFET
NCEP40P65GU datasheet
ncep40p65gu.pdf
http //www.ncepower.com NCEP40P65GU NCE P-Channel Super Trench Power MOSFET Description General Features The NCEP40P65GU uses Super Trench technology that is V =-40V,I =-65A DS D uniquely optimized to provide the most efficient high frequency R =7.8m (typical) @ V =-10V DS(ON) GS switching performance. Both conduction and switching power R =11.5m (typical) @ V =-4.5V DS(ON)
ncep40p65qu.pdf
http //www.ncepower.com NCEP40P65QU NCE P-Channel Super Trench Power MOSFET Description General Features The NCEP40P65QU uses Super Trench technology that is V =-40V,I =-65A DS D uniquely optimized to provide the most efficient high frequency R =7.8m (typical) @ V =-10V DS(ON) GS switching performance. Both conduction and switching power R =11.5m (typical) @ V =-4.5V DS(ON)
ncep40p60k.pdf
http //www.ncepower.com NCEP40P60K NCE P-Channel Super Trench Power MOSFET Description General Features The NCEP40P60K uses Super Trench technology that is V =-40V,I =-60A DS D uniquely optimized to provide the most efficient high frequency R =8.8m (typical) @ V =-10V DS(ON) GS switching performance. Both conduction and switching power R =12.5m (typical) @ V =-4.5V DS(ON) G
ncep40p60g.pdf
http //www.ncepower.com NCEP40P60G NCE P-Channel Super Trench Power MOSFET Description General Features The NCEP40P60G uses Super Trench technology that is V =-40V,I =-60A DS D uniquely optimized to provide the most efficient high frequency R =8.8m (typical) @ V =-10V DS(ON) GS switching performance. Both conduction and switching power R =12.5m (typical) @ V =-4.5V DS(ON) G
Otros transistores... NCEP4090GU , NCEP40P07S , NCEP40P30K , NCEP40P30Q , NCEP40P35GU , NCEP40P60G , NCEP40P60K , NCEP40P60Q , CS150N03A8 , NCEP40P65QU , NCEP40P80G , NCEP40PT12K , NCEP40PT13D , NCEP40PT13GU , NCEP40PT15G , NCEP40PT30VD , NCEP40T11 .
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