NCEP40P65GU Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCEP40P65GU 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 85 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 65 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 4 nS
Cossⓘ - Capacitancia de salida: 660 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.016 Ohm
Encapsulados: DFN5X6-8L
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NCEP40P65GU datasheet
ncep40p65gu.pdf
http //www.ncepower.com NCEP40P65GU NCE P-Channel Super Trench Power MOSFET Description General Features The NCEP40P65GU uses Super Trench technology that is V =-40V,I =-65A DS D uniquely optimized to provide the most efficient high frequency R =7.8m (typical) @ V =-10V DS(ON) GS switching performance. Both conduction and switching power R =11.5m (typical) @ V =-4.5V DS(ON)
ncep40p65qu.pdf
http //www.ncepower.com NCEP40P65QU NCE P-Channel Super Trench Power MOSFET Description General Features The NCEP40P65QU uses Super Trench technology that is V =-40V,I =-65A DS D uniquely optimized to provide the most efficient high frequency R =7.8m (typical) @ V =-10V DS(ON) GS switching performance. Both conduction and switching power R =11.5m (typical) @ V =-4.5V DS(ON)
ncep40p60k.pdf
http //www.ncepower.com NCEP40P60K NCE P-Channel Super Trench Power MOSFET Description General Features The NCEP40P60K uses Super Trench technology that is V =-40V,I =-60A DS D uniquely optimized to provide the most efficient high frequency R =8.8m (typical) @ V =-10V DS(ON) GS switching performance. Both conduction and switching power R =12.5m (typical) @ V =-4.5V DS(ON) G
ncep40p60g.pdf
http //www.ncepower.com NCEP40P60G NCE P-Channel Super Trench Power MOSFET Description General Features The NCEP40P60G uses Super Trench technology that is V =-40V,I =-60A DS D uniquely optimized to provide the most efficient high frequency R =8.8m (typical) @ V =-10V DS(ON) GS switching performance. Both conduction and switching power R =12.5m (typical) @ V =-4.5V DS(ON) G
Otros transistores... NCEP4090GU, NCEP40P07S, NCEP40P30K, NCEP40P30Q, NCEP40P35GU, NCEP40P60G, NCEP40P60K, NCEP40P60Q, 4435, NCEP40P65QU, NCEP40P80G, NCEP40PT12K, NCEP40PT13D, NCEP40PT13GU, NCEP40PT15G, NCEP40PT30VD, NCEP40T11
Parámetros del MOSFET. Cómo se afectan entre sí.
History: NCE82H140D | SRH03P098LMTR-G | MTP4411Q8 | IXFR40N90P | APT8043SFLLG | DH060N08D | APJ10N65P
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