NCEP40T15G Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCEP40T15G

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 135 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 150 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 7 nS

Cossⓘ - Capacitancia de salida: 1450 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0023 Ohm

Encapsulados: DFN5X6-8L

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NCEP40T15G datasheet

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NCEP40T15G

http //www.ncepower.com NCEP40T15G NCE N-Channel Super Trench Power MOSFET Description The NCEP40T15G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw

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NCEP40T15G

NCEP40T15GU http //www.ncepower.com NCE N-Channel Super Trench Power MOSFET General Features Description V =40V,I =150A DS D The NCEP40T15GU uses Super Trench technology that is uniquely R =1.09m , typical@ V =10V DS(ON) GS optimized to provide the most efficient high frequency switching R =1.5m , typical@ V =4.5V DS(ON) GS performance. Both conduction and switching power l

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NCEP40T15G

Pb Free Product http //www.ncepower.com NCEP40T15A NCE N-Channel Super Trench Power MOSFET Description The NCEP40T15A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

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NCEP40T15G

http //www.ncepower.com NCEP40T15AGU NCE N-Channel Super Trench Power MOSFET Description The NCEP40T15AGU uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high frequency V =40V,I =150A DS D switching performance. Both conduction and switching power R =1.15m , typical@ V =10V DS(ON) GS losses are minimized due to an extremely

MOSTRAR MÁS

Otros transistores... NCEP40T11AG, NCEP40T11AK, NCEP40T11K, NCEP40T12AGU, NCEP40T12GU, NCEP40T13AGU, NCEP40T15AGU, NCEP40T15AK, 18N50, NCEP40T15GU, NCEP40T16LL, NCEP40T17AD, NCEP40T17AG, NCEP40T17AT, NCEP40T17G, NCEP40T19GU, NCEP40T20A