FDPF041N06BL1 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FDPF041N06BL1
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 44.1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 77 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0041 Ohm
Paquete / Cubierta: TO220F

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FDPF041N06BL1 Datasheet (PDF)

..1. Size:393K fairchild semi
fdpf041n06bl1.pdf

December 2014FDPF041N06BL1N-Channel PowerTrench MOSFET 60 V, 77 A, 4.1 mFeatures Description RDS(on) = 3.5 m ( Typ.) @ VGS = 10 V, ID = 77 A This N-Channel MOSFET is produced using Fairchild Semicon-ductors advanced PowerTrench process that has been tai- Low FOM RDS(on)*QGlored to minimize the on-state resistance while maintaining superior switching performa

8.1. Size:416K fairchild semi
fdpf045n10a.pdf

August 2014FDPF045N10AN-Channel PowerTrench MOSFET 100 V, 67 A, 4.5 mFeatures Description RDS(on) = 3.7 m ( Typ.)@ VGS = 10 V, ID = 67 A This N-Channel MOSFET is produced using FairchildSemiconductors advance PowerTrench process that has Fast Switching Speedbeen tailored to minimize the on-state resistance while maintain-ing superior switching performance.

8.2. Size:524K onsemi
fdpf045n10a.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

8.3. Size:274K inchange semiconductor
fdpf045n10a.pdf

isc N-Channel MOSFET Transistor FDPF045N10AFEATURESWith TO-220F packagingDrain Source Voltage-: V 100VDSSStatic drain-source on-resistance:RDS(on) 4.5m@V =10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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