NCEP40T17AT MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCEP40T17AT
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 250 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 170 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 7.2 nS
Cossⓘ - Capacitancia de salida: 1930 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0017 Ohm
Paquete / Cubierta: TO-247
Búsqueda de reemplazo de NCEP40T17AT MOSFET
NCEP40T17AT datasheet
ncep40t17at.pdf
Pb Free Product http //www.ncepower.com NCEP40T17AT NCE N-Channel Super Trench Power MOSFET Description The NCEP40T17ATuses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for
ncep40t17a.pdf
Pb Free Product http //www.ncepower.com NCEP40T17A NCE N-Channel Super Trench Power MOSFET Description The NCEP40T17A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for
ncep40t17ad.pdf
Pb Free Product http //www.ncepower.com NCEP40T17AD NCE N-Channel Super Trench Power MOSFET Description The NCEP40T17AD uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(ON) g hig
ncep40t17ag.pdf
http //www.ncepower.com NCEP40T17AG NCE N-Channel Super Trench Power MOSFET Description The NCEP40T17AG uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw
Otros transistores... NCEP40T13AGU , NCEP40T15AGU , NCEP40T15AK , NCEP40T15G , NCEP40T15GU , NCEP40T16LL , NCEP40T17AD , NCEP40T17AG , IRFZ24N , NCEP40T17G , NCEP40T19GU , NCEP40T20A , NCEP40T20AGU , NCEP40T20ALL , NCEP40T20ASL , NCEP40T20GU , NCEP40T35ALL .
History: IXTY01N80 | JMSL0612PP | JMSL0612PPD
History: IXTY01N80 | JMSL0612PP | JMSL0612PPD
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