NCEP40T20ALL Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCEP40T20ALL

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 300 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 250 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 8 nS

Cossⓘ - Capacitancia de salida: 2320.5 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.00135 Ohm

Encapsulados: TOLL

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NCEP40T20ALL datasheet

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NCEP40T20ALL

Pb Free Product http //www.ncepower.com NCEP40T20ALL NCE N-Channel Super Trench Power MOSFET Description The series of devices uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high frequency V =40V,I =250A DS D switching performance. Both conduction and switching power R =1.1m , typical @ V =10V DS(ON) GS losses are minimiz

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NCEP40T20ALL

Pb Free Product http //www.ncepower.com NCEP40T20AGU NCE N-Channel Super Trench Power MOSFET Description The NCEP40T20AGU uses Super Trench technology that General Features is uniquely optimized to provide the most efficient high V =40V,I =200A DS D frequency switching performance. Both conduction and R =0.95m , typical @ V =10V DS(ON) GS switching power losses are minimized d

 4.2. Size:672K  ncepower
ncep40t20asl.pdf pdf_icon

NCEP40T20ALL

http //www.ncepower.com NCEP40T20ASL NCE N-Channel Super Trench Power MOSFET Description The series of devices uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high frequency V =40V,I =340A DS D switching performance. Both conduction and switching power R =1.1m , typical @ V =10V DS(ON) GS losses are minimized due to an extr

 4.3. Size:535K  ncepower
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NCEP40T20ALL

http //www.ncepower.com NCEP40T20A NCE N-Channel Super Trench Power MOSFET Description The NCEP40T20A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(ON) g high-frequency switch

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