NCEP6035AQU MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCEP6035AQU

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 41 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 35 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 2.7 nS

Cossⓘ - Capacitancia de salida: 183.2 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.015 Ohm

Encapsulados: DFN3.3X3.3-8L

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NCEP6035AQU datasheet

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ncep6035aqu.pdf pdf_icon

NCEP6035AQU

http //www.ncepower.com NCEP6035AQU NCE N-Channel Super Trench Power MOSFET Description The NCEP6035AQU uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high V =60V,I =35A DS D frequency switching performance. Both conduction and R =10.0m (typical) @ V =10V DS(ON) GS switching power losses are minimized due to an extremely low

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NCEP6035AQU

http //www.ncepower.com NCEP6035AG NCE N-Channel Super Trench Power MOSFET Description The NCEP6035AG uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high VDS =60V,ID =35A frequency switching performance. Both conduction and RDS(ON)=9.8m (typical) @ VGS=10V switching power losses are minimized due to an extremely low RDS

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ncep6090gu.pdf pdf_icon

NCEP6035AQU

http //www.ncepower.com NCEP6090GU NCE N-Channel Super Trench Power MOSFET Description The NCEP6090GU uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high VDS =60V,ID =90A frequency switching performance. Both conduction and RDS(ON)=2.9m (typical) @ VGS=10V switching power losses are minimized due to an extremely low

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ncep6080ag.pdf pdf_icon

NCEP6035AQU

Pb Free Product http //www.ncepower.com NCEP6080AG NCE N-Channel Super Trench Power MOSFET Description The NCEP6080AG uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(O

Otros transistores... NCEP40T35AVD, NCEP50P80, NCEP50P80A, NCEP50P80AK, NCEP6012AS, NCEP6015AS, NCEP6016AS, NCEP6035AG, K2611, NCEP6040AGU, NCEP6050AQU, NCEP6050QU, NCEP6055AGU, NCEP6055GU, NCEP6060AGU, NCEP6060GU, NCEP6080G