NCEP6080G Todos los transistores

 ..1. Size:412K  ncepower
 ncep6080g.pdf

Pb Free Product http //www.ncepower.com NCEP6080G NCE N-Channel Super Trench Power MOSFET Description The NCEP6080G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

 6.1. Size:493K  ncepower
 ncep6080ag.pdf

Pb Free Product http //www.ncepower.com NCEP6080AG NCE N-Channel Super Trench Power MOSFET Description The NCEP6080AG uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(O

 8.1. Size:337K  ncepower
 ncep6090gu.pdf

http //www.ncepower.com NCEP6090GU NCE N-Channel Super Trench Power MOSFET Description The NCEP6090GU uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high VDS =60V,ID =90A frequency switching performance. Both conduction and RDS(ON)=2.9m (typical) @ VGS=10V switching power losses are minimized due to an extremely low

 8.2. Size:556K  ncepower
 ncep6050qu.pdf

http //www.ncepower.com NCEP6050QU NCE N-Channel Super Trench Power MOSFET Description The NCEP6050QU uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high V =60V,I =50A DS D frequency switching performance. Both conduction and R =6.5m (typical) @ V =10V DS(ON) GS switching power losses are minimized due to an extremely low c

 8.3. Size:341K  ncepower
 ncep6090.pdf

http //www.ncepower.com NCEP6090 NCE N-Channel Super Trench Power MOSFET Description The NCEP6090 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switchin

 8.4. Size:1092K  ncepower
 ncep6090d.pdf

http //www.ncepower.com NCEP6090D NCE N-Channel Super Trench Power MOSFET Description The series of devices uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high frequency V =60V,I =90A DS D switching performance. Both conduction and switching power R =6.4m , typical@ V =10V DS(ON) GS losses are minimized due to an extremely

 8.5. Size:716K  ncepower
 ncep6035aqu.pdf

http //www.ncepower.com NCEP6035AQU NCE N-Channel Super Trench Power MOSFET Description The NCEP6035AQU uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high V =60V,I =35A DS D frequency switching performance. Both conduction and R =10.0m (typical) @ V =10V DS(ON) GS switching power losses are minimized due to an extremely low

 8.6. Size:326K  ncepower
 ncep6090ak.pdf

http //www.ncepower.com NCEP6090AK NCE N-Channel Super Trench Power MOSFET Description The NCEP6090AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit

 8.7. Size:310K  ncepower
 ncep60nd30ag.pdf

http //www.ncepower.com NCEP60ND30AG NCE N-Channel Super Trench Power MOSFET Description General Features The NCEP60ND30AG uses Super Trench technology that is VDS =60V,ID =30A uniquely optimized to provide the most efficient high RDS(ON)=12m (typical) @ VGS=10V frequency switching performance. Both conduction and RDS(ON)=15m (typical) @ VGS=4.5V switching power losses are

 8.8. Size:305K  ncepower
 ncep6012as.pdf

http //www.ncepower.com NCEP6012AS NCE N-Channel Super Trench Power MOSFET Description General Features The NCEP6012AS uses Super Trench technology that is VDS =60V,ID =12A uniquely optimized to provide the most efficient high RDS(ON)=12.7m (typical) @ VGS=10V frequency switching performance. Both conduction and RDS(ON)=14.5m (typical) @ VGS=4.5V switching power losses are

 8.9. Size:336K  ncepower
 ncep60t15g.pdf

Pb Free Product http //www.ncepower.com NCEP60T15G NCE N-Channel Super Trench Power MOSFET Description The NCEP60T15G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

 8.10. Size:327K  ncepower
 ncep6040agu.pdf

http //www.ncepower.com NCEP6040AGU NCE N-Channel Super Trench Power MOSFET Description General Features The NCEP6040AGU uses Super Trench technology that is VDS =60V,ID =40A uniquely optimized to provide the most efficient high RDS(ON)=10m (typical) @ VGS=10V frequency switching performance. Both conduction and RDS(ON)=13m (typical) @ VGS=4.5V switching power losses are mi

 8.11. Size:339K  ncepower
 ncep60t20ll.pdf

http //www.ncepower.com NCEP60T20LL NCE N-Channel Super Trench Power MOSFET Description The NCEP60T20LL uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw

 8.12. Size:320K  ncepower
 ncep60t18.pdf

Pb Free Product http //www.ncepower.com NCEP60T18 NCE N-Channel Super Trench Power MOSFET Description The NCEP60T18 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

 8.13. Size:405K  ncepower
 ncep6090k.pdf

http //www.ncepower.com NCEP6090K NCE N-Channel Super Trench Power MOSFET Description The NCEP6090K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switch

 8.14. Size:322K  ncepower
 ncep6035ag.pdf

http //www.ncepower.com NCEP6035AG NCE N-Channel Super Trench Power MOSFET Description The NCEP6035AG uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high VDS =60V,ID =35A frequency switching performance. Both conduction and RDS(ON)=9.8m (typical) @ VGS=10V switching power losses are minimized due to an extremely low RDS

 8.15. Size:942K  ncepower
 ncep60t20d.pdf

Pb Free Product http //www.ncepower.com NCEP60T20D NCE N-Channel Super Trench Power MOSFET Description The NCEP60T20D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(ON) g high

 8.16. Size:472K  ncepower
 ncep6020as.pdf

Pb Free Product http //www.ncepower.com NCEP6020AS NCE N-Channel Super Trench Power MOSFET Description The NCEP6020AS uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(O

 8.17. Size:365K  ncepower
 ncep6016as.pdf

Pb Free Product http //www.ncepower.com NCEP6016AS NCE N-Channel Super Trench Power MOSFET Description The NCEP6016AS uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

 8.18. Size:399K  ncepower
 ncep60t20.pdf

Pb Free Product http //www.ncepower.com NCEP60T20 NCE N-Channel Super Trench Power MOSFET Description The NCEP60T20 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

 8.19. Size:648K  ncepower
 ncep6055gu.pdf

http //www.ncepower.com NCEP6055GU NCE N-Channel Super Trench Power MOSFET Description The NCEP6055GU uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high V =60V,I =55A DS D frequency switching performance. Both conduction and R =6.5m (typical) @ V =10V DS(ON) GS switching power losses are minimized due to an extremely low c

 8.20. Size:326K  ncepower
 ncep60t18a.pdf

Pb Free Product http //www.ncepower.com NCEP60T18A NCE N-Channel Super Trench Power MOSFET Description The NCEP60T18A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

 8.21. Size:321K  ncepower
 ncep6015as.pdf

http //www.ncepower.com NCEP6015AS NCE N-Channel Super Trench Power MOSFET Description The NCEP6015AS uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high VDS =60V,ID =15A frequency switching performance. Both conduction and RDS(ON)=8.3m (typical) @ VGS=10V switching power losses are minimized due to an extremely low RDS

 8.22. Size:434K  ncepower
 ncep60t12k.pdf

Pb Free Product http //www.ncepower.com NCEP60T12K NCE N-Channel Super Trench Power MOSFET Description The NCEP60T12K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

 8.23. Size:669K  ncepower
 ncep6060agu.pdf

http //www.ncepower.com NCEP6060AGU NCE N-Channel Super Trench Power MOSFET Description The NCEP6060AGU uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(ON) g high-frequency swit

 8.24. Size:688K  ncepower
 ncep6060gu.pdf

 8.25. Size:487K  ncepower
 ncep60t12a.pdf

Pb Free Product http //www.ncepower.com NCEP60T12A NCE N-Channel Super Trench Power MOSFET Description The NCEP60T12A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(O

 8.26. Size:352K  ncepower
 ncep6090agu.pdf

http //www.ncepower.com NCEP6090AGU NCE N-Channel Super Trench Power MOSFET Description General Features The NCEP6090AGU uses Super Trench technology that is VDS =60V,ID =90A uniquely optimized to provide the most efficient high RDS(ON)=2.8m (typical) @ VGS=10V frequency switching performance. Both conduction and RDS(ON)=3.5m (typical) @ VGS=4.5V switching power losses are

 8.27. Size:374K  ncepower
 ncep60t20t.pdf

Pb Free Product http //www.ncepower.com NCEP60T20T NCE N-Channel Super Trench Power MOSFET Description The NCEP60T20T uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

 8.28. Size:630K  ncepower
 ncep6050aqu.pdf

http //www.ncepower.com NCEP6050AQU NCE N-Channel Super Trench Power MOSFET Description The NCEP6050AQU uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high V =60V,I =50A DS D frequency switching performance. Both conduction and R =6.5m (typical) @ V =10V DS(ON) GS switching power losses are minimized due to an extremely low

 8.29. Size:342K  ncepower
 ncep60t15ag.pdf

Pb Free Product http //www.ncepower.com NCEP60T15AG NCE N-Channel Super Trench Power MOSFET Description The NCEP60T15AG uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

 8.30. Size:452K  ncepower
 ncep60t12ak.pdf

Pb Free Product http //www.ncepower.com NCEP60T12AK NCE N-Channel Super Trench Power MOSFET Description The NCEP60T12AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

 8.31. Size:388K  ncepower
 ncep60t20a.pdf

Pb Free Product http //www.ncepower.com NCEP60T20A NCE N-Channel Super Trench Power MOSFET Description The NCEP60T20A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

 8.32. Size:348K  ncepower
 ncep60t12t.pdf

http //www.ncepower.com NCEP60T12T NCE N-Channel Super Trench Power MOSFET Description The NCEP60T12T uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw

 8.33. Size:1005K  ncepower
 ncep6055agu.pdf

http //www.ncepower.com NCEP6055AGU NCE N-Channel Super Trench Power MOSFET Description General Features The NCEP6055AGU uses Super Trench technology that is V =60V,I =55A DS D uniquely optimized to provide the most efficient high frequency R =6.5m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power R =7.7m (typical) @ V =4.5V DS(ON) GS l

 8.34. Size:602K  ncepower
 ncep60nd60g.pdf

http //www.ncepower.com NCEP60ND60G NCE N-Channel Super Trench Power MOSFET Description General Features The NCEP60ND60G uses Super Trench technology that is V =60V,I =55A DS D uniquely optimized to provide the most efficient high R =7.8m (typical) @ V =10V DS(ON) GS frequency switching performance. Both conduction and Excellent gate charge x R product(FOM) DS(on) switchi

 8.35. Size:324K  ncepower
 ncep60t18d.pdf

http //www.ncepower.com NCEP60T18D NCE N-Channel Super Trench Power MOSFET Description The NCEP60T18D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw

 8.36. Size:1113K  ncepower
 ncep60t12ad.pdf

Pb Free Product NCEP60T12AD http //www.ncepower.com NCE N-Channel Super Trench Power MOSFET Description The NCEP60T12AD uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high V =60V,I =120A DS D frequency switching performance. Both conduction and R