NCEP6090D MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCEP6090D
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 100 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 90 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 2 nS
Cossⓘ - Capacitancia de salida: 345 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0072 Ohm
Encapsulados: TO263
Búsqueda de reemplazo de NCEP6090D MOSFET
- Selecciónⓘ de transistores por parámetros
NCEP6090D datasheet
ncep6090d.pdf
http //www.ncepower.com NCEP6090D NCE N-Channel Super Trench Power MOSFET Description The series of devices uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high frequency V =60V,I =90A DS D switching performance. Both conduction and switching power R =6.4m , typical@ V =10V DS(ON) GS losses are minimized due to an extremely
ncep6090gu.pdf
http //www.ncepower.com NCEP6090GU NCE N-Channel Super Trench Power MOSFET Description The NCEP6090GU uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high VDS =60V,ID =90A frequency switching performance. Both conduction and RDS(ON)=2.9m (typical) @ VGS=10V switching power losses are minimized due to an extremely low
ncep6090.pdf
http //www.ncepower.com NCEP6090 NCE N-Channel Super Trench Power MOSFET Description The NCEP6090 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switchin
ncep6090ak.pdf
http //www.ncepower.com NCEP6090AK NCE N-Channel Super Trench Power MOSFET Description The NCEP6090AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit
Otros transistores... NCEP6050QU, NCEP6055AGU, NCEP6055GU, NCEP6060AGU, NCEP6060GU, NCEP6080G, NCEP6090AGU, NCEP6090AK, IRF3205, NCEP6090GU, NCEP60T12AD, NCEP60T12K, NCEP60T15AG, NCEP60T18A, NCEP60T18D, NCEP60T20D, NCEP60T20LL
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