NCEP60T18D Todos los transistores

 

NCEP60T18D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCEP60T18D
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 220 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 180 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 70 nC
   trⓘ - Tiempo de subida: 11 nS
   Cossⓘ - Capacitancia de salida: 965 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0032 Ohm
   Paquete / Cubierta: TO-263

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NCEP60T18D Datasheet (PDF)

 ..1. Size:324K  ncepower
ncep60t18d.pdf

NCEP60T18D
NCEP60T18D

http://www.ncepower.com NCEP60T18DNCE N-Channel Super Trench Power MOSFET Description The NCEP60T18D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw

 5.1. Size:320K  ncepower
ncep60t18.pdf

NCEP60T18D
NCEP60T18D

Pb Free Producthttp://www.ncepower.com NCEP60T18NCE N-Channel Super Trench Power MOSFET Description The NCEP60T18 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

 5.2. Size:326K  ncepower
ncep60t18a.pdf

NCEP60T18D
NCEP60T18D

Pb Free Producthttp://www.ncepower.com NCEP60T18ANCE N-Channel Super Trench Power MOSFET Description The NCEP60T18A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

 6.1. Size:336K  ncepower
ncep60t15g.pdf

NCEP60T18D
NCEP60T18D

Pb Free Producthttp://www.ncepower.com NCEP60T15GNCE N-Channel Super Trench Power MOSFET Description The NCEP60T15G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

 6.2. Size:434K  ncepower
ncep60t12k.pdf

NCEP60T18D
NCEP60T18D

Pb Free Producthttp://www.ncepower.com NCEP60T12KNCE N-Channel Super Trench Power MOSFET Description The NCEP60T12K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

 6.3. Size:487K  ncepower
ncep60t12a.pdf

NCEP60T18D
NCEP60T18D

Pb Free Product http://www.ncepower.com NCEP60T12A NCE N-Channel Super Trench Power MOSFET Description The NCEP60T12A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(O

 6.4. Size:342K  ncepower
ncep60t15ag.pdf

NCEP60T18D
NCEP60T18D

Pb Free Producthttp://www.ncepower.com NCEP60T15AGNCE N-Channel Super Trench Power MOSFET Description The NCEP60T15AG uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

 6.5. Size:452K  ncepower
ncep60t12ak.pdf

NCEP60T18D
NCEP60T18D

Pb Free Producthttp://www.ncepower.com NCEP60T12AKNCE N-Channel Super Trench Power MOSFET Description The NCEP60T12AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

 6.6. Size:348K  ncepower
ncep60t12t.pdf

NCEP60T18D
NCEP60T18D

http://www.ncepower.com NCEP60T12TNCE N-Channel Super Trench Power MOSFET Description The NCEP60T12T uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw

 6.7. Size:1113K  ncepower
ncep60t12ad.pdf

NCEP60T18D
NCEP60T18D

Pb Free ProductNCEP60T12ADhttp://www.ncepower.comNCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP60T12AD uses Super Trench technology that isGeneral Featuresuniquely optimized to provide the most efficient high V =60V,I =120ADS Dfrequency switching performance. Both conduction and R

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