NCEP60T18D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCEP60T18D
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 220 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 180 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 11 nS
Cossⓘ - Capacitancia de salida: 965 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0032 Ohm
Paquete / Cubierta: TO-263
NCEP60T18D Datasheet (PDF)
ncep60t18d.pdf

http://www.ncepower.com NCEP60T18DNCE N-Channel Super Trench Power MOSFET Description The NCEP60T18D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw
ncep60t18.pdf

Pb Free Producthttp://www.ncepower.com NCEP60T18NCE N-Channel Super Trench Power MOSFET Description The NCEP60T18 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi
ncep60t18a.pdf

Pb Free Producthttp://www.ncepower.com NCEP60T18ANCE N-Channel Super Trench Power MOSFET Description The NCEP60T18A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for
ncep60t15g.pdf

Pb Free Producthttp://www.ncepower.com NCEP60T15GNCE N-Channel Super Trench Power MOSFET Description The NCEP60T15G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: BUK763R9-60E | AP9972GP | WMK9N50D1B | STFI24NM60N | IRFB4310ZPBF | SI1958DH | HM4953A
History: BUK763R9-60E | AP9972GP | WMK9N50D1B | STFI24NM60N | IRFB4310ZPBF | SI1958DH | HM4953A



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