NCEP60T20LL Todos los transistores

 

NCEP60T20LL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCEP60T20LL
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 350 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 300 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3.5 V
   Qgⓘ - Carga de la puerta: 129 nC
   trⓘ - Tiempo de subida: 31 nS
   Cossⓘ - Capacitancia de salida: 1800 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0015 Ohm
   Paquete / Cubierta: TOLL
     - Selección de transistores por parámetros

 

NCEP60T20LL Datasheet (PDF)

 ..1. Size:339K  ncepower
 ncep60t20ll.pdf pdf_icon

NCEP60T20LL

http://www.ncepower.com NCEP60T20LLNCE N-Channel Super Trench Power MOSFET Description The NCEP60T20LL uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw

 5.1. Size:942K  ncepower
 ncep60t20d.pdf pdf_icon

NCEP60T20LL

Pb Free Producthttp://www.ncepower.comNCEP60T20DNCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP60T20D uses Super Trench technology that isuniquely optimized to provide the most efficient highfrequency switching performance. Both conduction andswitching power losses are minimized due to an extremelylow combination of R and Q . This device is ideal forDS(ON) ghigh

 5.2. Size:399K  ncepower
 ncep60t20.pdf pdf_icon

NCEP60T20LL

Pb Free Producthttp://www.ncepower.com NCEP60T20NCE N-Channel Super Trench Power MOSFET Description The NCEP60T20 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

 5.3. Size:374K  ncepower
 ncep60t20t.pdf pdf_icon

NCEP60T20LL

Pb Free Producthttp://www.ncepower.com NCEP60T20TNCE N-Channel Super Trench Power MOSFET Description The NCEP60T20T uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

MOSTRAR MÁS

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: WMO50P04T1 | CJL2016 | NVMFS5C645NL | 2SK1431 | DMP21D2UFA | 4N70KG-TF3-T | IPA50R190CE

 

 
Back to Top

 


 
.