NCEP60T20LL MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCEP60T20LL
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 350 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 300 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 31 nS
Cossⓘ - Capacitancia de salida: 1800 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0015 Ohm
Encapsulados: TOLL
Búsqueda de reemplazo de NCEP60T20LL MOSFET
- Selecciónⓘ de transistores por parámetros
NCEP60T20LL datasheet
ncep60t20ll.pdf
http //www.ncepower.com NCEP60T20LL NCE N-Channel Super Trench Power MOSFET Description The NCEP60T20LL uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw
ncep60t20d.pdf
Pb Free Product http //www.ncepower.com NCEP60T20D NCE N-Channel Super Trench Power MOSFET Description The NCEP60T20D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(ON) g high
ncep60t20.pdf
Pb Free Product http //www.ncepower.com NCEP60T20 NCE N-Channel Super Trench Power MOSFET Description The NCEP60T20 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi
ncep60t20t.pdf
Pb Free Product http //www.ncepower.com NCEP60T20T NCE N-Channel Super Trench Power MOSFET Description The NCEP60T20T uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for
Otros transistores... NCEP6090D, NCEP6090GU, NCEP60T12AD, NCEP60T12K, NCEP60T15AG, NCEP60T18A, NCEP60T18D, NCEP60T20D, IRFZ44, NCEP8588, NCEP85T10G, NCEP85T15D, NCEP85T25, NCEP85T25VD, NCEP85T30LL, NCEP85T30T, NCEP8814AS
History: UTM2513
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