MRF136 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF136/DThe RF MOSFET LineRF PowerMRF136Field-Effect TransistorsMRF136YN-Channel Enhancement-Mode MOSFETs. . . designed for wideband largesignal amplifier and oscillator applications upto 400 MHz range, in either single ended or pushpull configuration. Guaranteed 28 Volt, 150 MHz Performance15 W, 30 W,

MRF136 The RF MOSFET Line M/A-COM Products Released - Rev. 05202009 15W, to 400MHz, 28V Product Image Designed for wideband large signal amplifier and oscillator applications Up to 400 MHz range, in single-ended configuration NChannel enhancement mode . Guaranteed 28 volt, 150 MHz performance Output power = 15 watts Narrowband gain = 16 dB (Typ.) Efficiency =

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF136/DThe RF MOSFET LineRF PowerMRF136Field-Effect TransistorsMRF136YN-Channel Enhancement-Mode MOSFETs. . . designed for wideband largesignal amplifier and oscillator applications upto 400 MHz range, in either single ended or pushpull configuration. Guaranteed 28 Volt, 150 MHz Performance15 W, 30 W,

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1375/DThe RF LineMicrowave PulseMRF1375Power TransistorDesigned for 10251150 MHz pulse common base amplifier applicationssuch as TACAN and DME. Guaranteed Performance @ 1090 MHzOutput Power = 375 Watts Peak375 W (PEAK), 10251150 MHzGain = 6.7 dB Min 7.5 dB (Typ)MICROWAVE POWER 100% Tested for

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF137/DThe RF MOSFET LineRF Power Field-Effect TransistorNChannel EnhancementMode MRF137. . . designed for wideband largesignal output and driver stages up to400 MHz range. Guaranteed 28 Volt, 150 MHz PerformanceOutput Power = 30 WattsMinimum Gain = 13 dB30 W, to 400 MHzEfficiency 60% (Typical)

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF137/DThe RF MOSFET LineRF Power Field-Effect TransistorNChannel EnhancementMode MRF137. . . designed for wideband largesignal output and driver stages up to400 MHz range. Guaranteed 28 Volt, 150 MHz PerformanceOutput Power = 30 WattsMinimum Gain = 13 dB30 W, to 400 MHzEfficiency 60% (Typical)

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF134/DThe RF MOSFET LineRF Power Field-Effect TransistorNChannel EnhancementMode MRF134. . . designed for wideband largesignal amplifier and oscillator applications upto 400 MHz range. Guaranteed 28 Volt, 150 MHz PerformanceOutput Power = 5.0 WattsMinimum Gain = 11 dB5.0 W, to 400 MHzEfficiency

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF134/DThe RF MOSFET LineRF Power Field-Effect TransistorNChannel EnhancementMode MRF134. . . designed for wideband largesignal amplifier and oscillator applications upto 400 MHz range. Guaranteed 28 Volt, 150 MHz PerformanceOutput Power = 5.0 WattsMinimum Gain = 11 dB5.0 W, to 400 MHzEfficiency

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF138/DThe RF MOSFET LineRF Power Field-Effect TransistorNChannel EnhancementMode MRF138. . . designed for power amplifier applications in industrial, commercial andamateur radio equipment to 175 MHz. Superior High Order IMD Specified 28 Volts, 30 MHz CharacteristicsOutput Power = 30 Watts30 W, 175 MH

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1375/DThe RF LineMicrowave PulseMRF1375Power TransistorDesigned for 10251150 MHz pulse common base amplifier applicationssuch as TACAN and DME. Guaranteed Performance @ 1090 MHzOutput Power = 375 Watts Peak375 W (PEAK), 10251150 MHzGain = 6.7 dB Min 7.5 dB (Typ)MICROWAVE POWER 100% Tested for

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF138/DThe RF MOSFET LineRF Power Field-Effect TransistorNChannel EnhancementMode MRF138. . . designed for power amplifier applications in industrial, commercial andamateur radio equipment to 175 MHz. Superior High Order IMD Specified 28 Volts, 30 MHz CharacteristicsOutput Power = 30 Watts30 W, 175 MH

MRF137 The RF MOSFET Line M/A-COM Products Released - Rev. 05202009 30W, to 400MHz, 28V Product Image Designed for wideband large signal output and drive stages up to 400 MHz range. NChannel enhancement mode Guaranteed 28 V, 150 MHz performance Output power = 30 W Minimum gain = 13 dB Efficiency 60% (Typical) Small and largesignal characterizati

MRF134 The RF MOSFET Line: Broadband RF Power FET M/A-COM Products Released - Rev. 05202009 5.0W, to 400MHz, 28V Product Image Designed for wideband largesignal amplifier and oscillator applications up to 400 MHz range. NChannel enhancement mode Guaranteed 28V, 150 MHz performance Output power = 5.0 watts Minimum gain = 11 dB Efficiency = 55% (Typical)