MRF138 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MRF138
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 115 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 65 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 40 V
|Id|ⓘ - Corriente continua
de drenaje: 6 A
Tjⓘ - Temperatura máxima de unión: 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Cossⓘ - Capacitancia de salida: 70 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.25 Ohm
Encapsulados: CASE211-07
Búsqueda de reemplazo de MRF138 MOSFET
- Selecciónⓘ de transistores por parámetros
MRF138 datasheet
..1. Size:149K motorola
mrf138.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF138/D The RF MOSFET Line RF Power Field-Effect Transistor N Channel Enhancement Mode MRF138 . . . designed for power amplifier applications in industrial, commercial and amateur radio equipment to 175 MHz. Superior High Order IMD Specified 28 Volts, 30 MHz Characteristics Output Power = 30 Watts 30 W, 175 MH
0.1. Size:149K motorola
mrf138re.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF138/D The RF MOSFET Line RF Power Field-Effect Transistor N Channel Enhancement Mode MRF138 . . . designed for power amplifier applications in industrial, commercial and amateur radio equipment to 175 MHz. Superior High Order IMD Specified 28 Volts, 30 MHz Characteristics Output Power = 30 Watts 30 W, 175 MH
9.1. Size:98K motorola
mrf1375r.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1375/D The RF Line Microwave Pulse MRF1375 Power Transistor Designed for 1025 1150 MHz pulse common base amplifier applications such as TACAN and DME. Guaranteed Performance @ 1090 MHz Output Power = 375 Watts Peak 375 W (PEAK), 1025 1150 MHz Gain = 6.7 dB Min 7.5 dB (Typ) MICROWAVE POWER 100% Tested for
9.2. Size:196K motorola
mrf137.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF137/D The RF MOSFET Line RF Power Field-Effect Transistor N Channel Enhancement Mode MRF137 . . . designed for wideband large signal output and driver stages up to 400 MHz range. Guaranteed 28 Volt, 150 MHz Performance Output Power = 30 Watts Minimum Gain = 13 dB 30 W, to 400 MHz Efficiency 60% (Typical)
9.3. Size:196K motorola
mrf137re.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF137/D The RF MOSFET Line RF Power Field-Effect Transistor N Channel Enhancement Mode MRF137 . . . designed for wideband large signal output and driver stages up to 400 MHz range. Guaranteed 28 Volt, 150 MHz Performance Output Power = 30 Watts Minimum Gain = 13 dB 30 W, to 400 MHz Efficiency 60% (Typical)
9.4. Size:284K motorola
mrf136 mrf136y.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF136/D The RF MOSFET Line RF Power MRF136 Field-Effect Transistors MRF136Y N-Channel Enhancement-Mode MOSFETs . . . designed for wideband large signal amplifier and oscillator applications up to 400 MHz range, in either single ended or push pull configuration. Guaranteed 28 Volt, 150 MHz Performance 15 W, 30 W,
9.5. Size:205K motorola
mrf134re.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF134/D The RF MOSFET Line RF Power Field-Effect Transistor N Channel Enhancement Mode MRF134 . . . designed for wideband large signal amplifier and oscillator applications up to 400 MHz range. Guaranteed 28 Volt, 150 MHz Performance Output Power = 5.0 Watts Minimum Gain = 11 dB 5.0 W, to 400 MHz Efficiency
9.6. Size:205K motorola
mrf134.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF134/D The RF MOSFET Line RF Power Field-Effect Transistor N Channel Enhancement Mode MRF134 . . . designed for wideband large signal amplifier and oscillator applications up to 400 MHz range. Guaranteed 28 Volt, 150 MHz Performance Output Power = 5.0 Watts Minimum Gain = 11 dB 5.0 W, to 400 MHz Efficiency
9.7. Size:284K motorola
mrf136re.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF136/D The RF MOSFET Line RF Power MRF136 Field-Effect Transistors MRF136Y N-Channel Enhancement-Mode MOSFETs . . . designed for wideband large signal amplifier and oscillator applications up to 400 MHz range, in either single ended or push pull configuration. Guaranteed 28 Volt, 150 MHz Performance 15 W, 30 W,
9.8. Size:98K motorola
mrf1375.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1375/D The RF Line Microwave Pulse MRF1375 Power Transistor Designed for 1025 1150 MHz pulse common base amplifier applications such as TACAN and DME. Guaranteed Performance @ 1090 MHz Output Power = 375 Watts Peak 375 W (PEAK), 1025 1150 MHz Gain = 6.7 dB Min 7.5 dB (Typ) MICROWAVE POWER 100% Tested for
9.9. Size:431K macom
mrf137.pdf
MRF137 The RF MOSFET Line M/A-COM Products Released - Rev. 05202009 30W, to 400MHz, 28V Product Image Designed for wideband large signal output and drive stages up to 400 MHz range. N Channel enhancement mode Guaranteed 28 V, 150 MHz performance Output power = 30 W Minimum gain = 13 dB Efficiency 60% (Typical) Small and large signal characterizati
9.10. Size:493K macom
mrf134.pdf
MRF134 The RF MOSFET Line Broadband RF Power FET M/A-COM Products Released - Rev. 05202009 5.0W, to 400MHz, 28V Product Image Designed for wideband large signal amplifier and oscillator applications up to 400 MHz range. N Channel enhancement mode Guaranteed 28V, 150 MHz performance Output power = 5.0 watts Minimum gain = 11 dB Efficiency = 55% (Typical)
9.11. Size:598K macom
mrf136.pdf
MRF136 The RF MOSFET Line M/A-COM Products Released - Rev. 05202009 15W, to 400MHz, 28V Product Image Designed for wideband large signal amplifier and oscillator applications Up to 400 MHz range, in single-ended configuration N Channel enhancement mode . Guaranteed 28 volt, 150 MHz performance Output power = 15 watts Narrowband gain = 16 dB (Typ.) Efficiency =
Otros transistores... NCEPB303GU, NCES120R036T4, NCES120R062T4, QM0930M3, MRF134, MRF136, MRF136Y, MRF137, IRF9540, MRF140, MRF141, MRF141G, MRF148, MRF150, MRF1507, MRF1507T1, MRF151
