MRF141G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MRF141G
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 500 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 65 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 40 V
|Id|ⓘ - Corriente continua de drenaje: 32 A
Tjⓘ - Temperatura máxima de unión: 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Cossⓘ - Capacitancia de salida: 420 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.2 Ohm
Paquete / Cubierta: CASE375-04
- Selección de transistores por parámetros
MRF141G Datasheet (PDF)
mrf141g.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF141G/DThe RF MOSFET LineRF Power Field-Effect TransistorNChannel EnhancementMode MOSFET MRF141GDesigned for broadband commercial and military applications at frequenciesto 175 MHz. The high power, high gain and broadband performance of thisdevice makes possible solid state transmitters for FM broadcast or TV ch
mrf141gr.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF141G/DThe RF MOSFET LineRF Power Field-Effect TransistorNChannel EnhancementMode MOSFET MRF141GDesigned for broadband commercial and military applications at frequenciesto 175 MHz. The high power, high gain and broadband performance of thisdevice makes possible solid state transmitters for FM broadcast or TV ch
mrf141grev2d.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF141G/DThe RF MOSFET LineRF Power Field-Effect TransistorNChannel EnhancementMode MOSFET MRF141GDesigned for broadband commercial and military applications at frequenciesto 175 MHz. The high power, high gain and broadband performance of thisdevice makes possible solid state transmitters for FM broadcast or TV ch
mrf141re.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF141/DThe RF MOSFET LineRF Power Field-Effect TransistorNChannel EnhancementMode MOSFET MRF141Designed for broadband commercial and military applications at frequenciesto 175 MHz. The high power, high gain and broadband performance of thisdevice makes possible solid state transmitters for FM broadcast or TV chan
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: CTLDM7181-M832D | IPAW60R280P7S | HM10N60F | S40N09RP | BUK7Y12-100E | AP4506GEM | 2SK2019-01
History: CTLDM7181-M832D | IPAW60R280P7S | HM10N60F | S40N09RP | BUK7Y12-100E | AP4506GEM | 2SK2019-01



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: DHF10H035R | DHF100N03B13 | DHF035N04 | DHEZ24B31 | DHESJ17N65 | DHESJ13N65 | DHESJ11N65 | DHE9Z24 | DHE90N055R | DHE90N045R | DHE85N08 | DHE8290 | DHE80N08B22 | DHE8004 | DHE50N15 | DHE50N06FZC
Popular searches
2sc945 transistor | c2073 transistor | ac176 transistor | mpsa20 | irfp264 | ksc2690 | bc546 datasheet | mpsa06 transistor