MRF141G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MRF141G
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 500 W
Voltaje máximo drenador - fuente |Vds|: 65 V
Voltaje máximo fuente - puerta |Vgs|: 40 V
Corriente continua de drenaje |Id|: 32 A
Temperatura máxima de unión (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 5 V
Conductancia de drenaje-sustrato (Cd): 420 pF
Resistencia entre drenaje y fuente RDS(on): 0.2 Ohm
Paquete / Cubierta: CASE375-04
Búsqueda de reemplazo de MOSFET MRF141G
MRF141G Datasheet (PDF)
mrf141g.pdf
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MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF141G/DThe RF MOSFET LineRF Power Field-Effect TransistorNChannel EnhancementMode MOSFET MRF141GDesigned for broadband commercial and military applications at frequenciesto 175 MHz. The high power, high gain and broadband performance of thisdevice makes possible solid state transmitters for FM broadcast or TV ch
mrf141gr.pdf
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MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF141G/DThe RF MOSFET LineRF Power Field-Effect TransistorNChannel EnhancementMode MOSFET MRF141GDesigned for broadband commercial and military applications at frequenciesto 175 MHz. The high power, high gain and broadband performance of thisdevice makes possible solid state transmitters for FM broadcast or TV ch
mrf141grev2d.pdf
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MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF141G/DThe RF MOSFET LineRF Power Field-Effect TransistorNChannel EnhancementMode MOSFET MRF141GDesigned for broadband commercial and military applications at frequenciesto 175 MHz. The high power, high gain and broadband performance of thisdevice makes possible solid state transmitters for FM broadcast or TV ch
mrf141re.pdf
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MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF141/DThe RF MOSFET LineRF Power Field-Effect TransistorNChannel EnhancementMode MOSFET MRF141Designed for broadband commercial and military applications at frequenciesto 175 MHz. The high power, high gain and broadband performance of thisdevice makes possible solid state transmitters for FM broadcast or TV chan
mrf141.pdf
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MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF141/DThe RF MOSFET LineRF Power Field-Effect TransistorNChannel EnhancementMode MOSFET MRF141Designed for broadband commercial and military applications at frequenciesto 175 MHz. The high power, high gain and broadband performance of thisdevice makes possible solid state transmitters for FM broadcast or TV chan
mrf141rev8.pdf
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MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF141/DThe RF MOSFET LineRF Power Field-Effect TransistorNChannel EnhancementMode MOSFET MRF141Designed for broadband commercial and military applications at frequenciesto 175 MHz. The high power, high gain and broadband performance of thisdevice makes possible solid state transmitters for FM broadcast or TV chan
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