MRF173 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MRF173
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 220 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 65 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 40 V
|Id|ⓘ - Corriente continua
de drenaje: 9 A
Tjⓘ - Temperatura máxima de unión: 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Cossⓘ - Capacitancia de salida: 105 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.5556 Ohm
Encapsulados: CASE211-11
Búsqueda de reemplazo de MRF173 MOSFET
- Selecciónⓘ de transistores por parámetros
MRF173 datasheet
..1. Size:123K motorola
mrf173.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF173/D The RF MOSFET Line RF Power MRF173 Field Effect Transistors N Channel Enhancement Mode MOSFETs Designed for broadband commercial and military applications up to 200 MHz frequency range. The high power, high gain and broadband performance of these devices make possible solid state transmitters for FM broadcast
..2. Size:107K motorola
mrf173 mrf173cq.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF173/D The RF MOSFET Line RF Power MRF173 Field Effect Transistors MRF173CQ N Channel Enhancement Mode MOSFETs Designed for broadband commercial and military applications up to 200 MHz frequency range. The high power, high gain and broadband performance of these devices make possible solid state transmitters for FM
..3. Size:337K macom
mrf173.pdf
MRF173 The RF MOSFET Line M/A-COM Products Released - Rev. 07.07 80W, 175MHz, 28V Designed for broadband commercial and military applications up to Product Image 200 MHz frequency range. The high power, high gain and broadband performance of this device make possible solid state transmitters for FM broadcast or TV channel frequency bands. N Channel enhancement mode MOS
0.1. Size:123K motorola
mrf173re.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF173/D The RF MOSFET Line RF Power MRF173 Field Effect Transistors N Channel Enhancement Mode MOSFETs Designed for broadband commercial and military applications up to 200 MHz frequency range. The high power, high gain and broadband performance of these devices make possible solid state transmitters for FM broadcast
0.2. Size:107K motorola
mrf173rev8.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF173/D The RF MOSFET Line RF Power MRF173 Field Effect Transistors MRF173CQ N Channel Enhancement Mode MOSFETs Designed for broadband commercial and military applications up to 200 MHz frequency range. The high power, high gain and broadband performance of these devices make possible solid state transmitters for FM
9.1. Size:177K motorola
mrf176gurev8.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF176GU/D The RF MOSFET Line RF Power MRF176GU Field-Effect Transistors MRF176GV N Channel Enhancement Mode Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state tra
9.2. Size:138K motorola
mrf175lurev8.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF175LU/D The RF MOSFET Line RF Power MRF175LU Field-Effect Transistors MRF175LV N Channel Enhancement Mode Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and broadband performance of each device makes possible solid state tr
9.3. Size:195K motorola
mrf176gu.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF176GU/D The RF MOSFET Line RF Power MRF176GU Field-Effect Transistors MRF176GV N Channel Enhancement Mode Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state tra
9.4. Size:183K motorola
mrf175gu.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF175GU/D The RF MOSFET Line RF Power MRF175GU Field-Effect Transistors MRF175GV N Channel Enhancement Mode Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state tra
9.5. Size:168K motorola
mrf174rev7.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF174/D The RF MOSFET Line RF Power Field Effect Transistor N Channel Enhancement Mode MRF174 . . . designed primarily for wideband large signal output and driver stages up to 200 MHz frequency range. Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 125 Watts Minimum Gain = 9.0 dB 125 W, to 200 MHz Effi
9.6. Size:172K motorola
mrf171re.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF171/D The RF MOSFET Line RF Power Field Effect Transistor N Channel Enhancement Mode MRF171 . . . designed primarily for wideband large signal output and driver stages up to 200 MHz frequency range. Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 45 Watts Minimum Gain = 12 dB 45 W, to 200 MHz Efficie
9.7. Size:191K motorola
mrf177re.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF177/D The RF MOSFET Line RF Power MRF177 Field Effect Transistors MRF177M N Channel Enhancement Mode MOSFETs Designed for broadband commercial and military applications up to 400 MHz frequency range. Primarily used as drivers or output amplifiers in push pull configurations. Can be used in manual gain control, ALC a
9.8. Size:156K motorola
mrf175lu.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF175LU/D The RF MOSFET Line RF Power MRF175LU Field-Effect Transistors MRF175LV N Channel Enhancement Mode . . . designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and broadband performance of each device makes possible solid st
9.9. Size:158K motorola
mrf175l .pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF175LU/D The RF MOSFET Line RF Power MRF175LU Field-Effect Transistors MRF175LV N Channel Enhancement Mode Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and broadband performance of each device makes possible solid state tr
9.10. Size:195K motorola
mrf176gu mrf176gv.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF176GU/D The RF MOSFET Line RF Power MRF176GU Field-Effect Transistors MRF176GV N Channel Enhancement Mode Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state tra
9.11. Size:186K motorola
mrf177rev8.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF177/D The RF MOSFET Line MRF177 RF Power Field Effect Transistors N Channel Enhancement Mode MOSFET 100 W, 28 V, 400 MHz Designed for broadband commercial and military applications up to 400 MHz N CHANNEL frequency range. Primarily used as a driver or output amplifier in push pull BROADBAND configurations. Can b
9.12. Size:186K motorola
mrf177.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF177/D The RF MOSFET Line MRF177 RF Power Field Effect Transistors N Channel Enhancement Mode MOSFET 100 W, 28 V, 400 MHz Designed for broadband commercial and military applications up to 400 MHz N CHANNEL frequency range. Primarily used as a driver or output amplifier in push pull BROADBAND configurations. Can b
9.13. Size:173K motorola
mrf174re.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF174/D The RF MOSFET Line RF Power Field Effect Transistor N Channel Enhancement Mode MRF174 . . . designed primarily for wideband large signal output and driver stages up to 200 MHz frequency range. Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 125 Watts Minimum Gain = 9.0 dB 125 W, to 200 MHz Effi
9.14. Size:158K motorola
mrf175lu mrf175lv.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF175LU/D The RF MOSFET Line RF Power MRF175LU Field-Effect Transistors MRF175LV N Channel Enhancement Mode Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and broadband performance of each device makes possible solid state tr
9.15. Size:172K motorola
mrf171.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF171/D The RF MOSFET Line RF Power Field Effect Transistor N Channel Enhancement Mode MRF171 . . . designed primarily for wideband large signal output and driver stages up to 200 MHz frequency range. Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 45 Watts Minimum Gain = 12 dB 45 W, to 200 MHz Efficie
9.16. Size:183K motorola
mrf175gu mrf175gv.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF175GU/D The RF MOSFET Line RF Power MRF175GU Field-Effect Transistors MRF175GV N Channel Enhancement Mode Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state tra
9.17. Size:173K motorola
mrf174.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF174/D The RF MOSFET Line RF Power Field Effect Transistor N Channel Enhancement Mode MRF174 . . . designed primarily for wideband large signal output and driver stages up to 200 MHz frequency range. Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 125 Watts Minimum Gain = 9.0 dB 125 W, to 200 MHz Effi
9.18. Size:191K motorola
mrf177 mrf177m.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF177/D The RF MOSFET Line RF Power MRF177 Field Effect Transistors MRF177M N Channel Enhancement Mode MOSFETs Designed for broadband commercial and military applications up to 400 MHz frequency range. Primarily used as drivers or output amplifiers in push pull configurations. Can be used in manual gain control, ALC a
9.19. Size:432K macom
mrf177.pdf
MRF177 The RF MOSFET Line M/A-COM Products Released - Rev. 07.07 100W, 400MHz, 28V Designed for broadband commercial and military applications up to 400 Product Image MHz frequency range. Primarily used as a driver or output amplifier in push pull configurations. Can be used in manual gain control, ALC and modulation circuits. N Channel enhancement mode MOSFET Typi
9.20. Size:466K macom
mrf171a.pdf
MRF171A The RF MOSFET Line M/A-COM Products Released - Rev. 07.07 45W, 150MHz, 28V Designed primarily for wideband large signal output and driver stages from Product Image 30 200 MHz. N Channel enhancement mode MOSFET Guaranteed performance at 150 MHz, 28 Vdc Output power = 45 W Power gain = 17 dB (min) Efficiency = 60% (min) Excellent thermal stabilit
Otros transistores... MRF157, MRF158, MRF160, MRF164W, MRF166, MRF166C, MRF166W, MRF171, AON6380, MRF173CQ, MRF174, MRF175GU, MRF175GV, MRF175LU, MRF175LV, MRF176GU, MRF176GV
