MRF175LU MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MRF175LU
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 270 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 65 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 40 V
|Id|ⓘ - Corriente continua de drenaje: 13 A
Tjⓘ - Temperatura máxima de unión: 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Cossⓘ - Capacitancia de salida: 200 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.5 Ohm
Paquete / Cubierta: CASE333-04
- Selección de transistores por parámetros
MRF175LU Datasheet (PDF)
mrf175lu.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF175LU/DThe RF MOSFET LineRF PowerMRF175LUField-Effect TransistorsMRF175LVNChannel EnhancementMode. . . designed for broadband commercial and military applications using singleended circuits at frequencies to 400 MHz. The high power, high gain andbroadband performance of each device makes possible solid st
mrf175lu mrf175lv.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF175LU/DThe RF MOSFET LineRF PowerMRF175LUField-Effect TransistorsMRF175LVNChannel EnhancementModeDesigned for broadband commercial and military applications using singleended circuits at frequencies to 400 MHz. The high power, high gain andbroadband performance of each device makes possible solid state tr
mrf175lurev8.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF175LU/DThe RF MOSFET LineRF PowerMRF175LUField-Effect TransistorsMRF175LVNChannel EnhancementModeDesigned for broadband commercial and military applications using singleended circuits at frequencies to 400 MHz. The high power, high gain andbroadband performance of each device makes possible solid state tr
mrf175l .pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF175LU/DThe RF MOSFET LineRF PowerMRF175LUField-Effect TransistorsMRF175LVNChannel EnhancementModeDesigned for broadband commercial and military applications using singleended circuits at frequencies to 400 MHz. The high power, high gain andbroadband performance of each device makes possible solid state tr
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: IRLR3715 | FMC20N50E



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