MRF176GV Todos los transistores

 ..1. Size:195K  motorola
 mrf176gu mrf176gv.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF176GU/D The RF MOSFET Line RF Power MRF176GU Field-Effect Transistors MRF176GV N Channel Enhancement Mode Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state tra

 7.1. Size:177K  motorola
 mrf176gurev8.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF176GU/D The RF MOSFET Line RF Power MRF176GU Field-Effect Transistors MRF176GV N Channel Enhancement Mode Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state tra

 7.2. Size:195K  motorola
 mrf176gu.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF176GU/D The RF MOSFET Line RF Power MRF176GU Field-Effect Transistors MRF176GV N Channel Enhancement Mode Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state tra

 9.1. Size:138K  motorola
 mrf175lurev8.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF175LU/D The RF MOSFET Line RF Power MRF175LU Field-Effect Transistors MRF175LV N Channel Enhancement Mode Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and broadband performance of each device makes possible solid state tr

 9.2. Size:183K  motorola
 mrf175gu.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF175GU/D The RF MOSFET Line RF Power MRF175GU Field-Effect Transistors MRF175GV N Channel Enhancement Mode Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state tra

 9.3. Size:168K  motorola
 mrf174rev7.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF174/D The RF MOSFET Line RF Power Field Effect Transistor N Channel Enhancement Mode MRF174 . . . designed primarily for wideband large signal output and driver stages up to 200 MHz frequency range. Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 125 Watts Minimum Gain = 9.0 dB 125 W, to 200 MHz Effi

 9.4. Size:172K  motorola
 mrf171re.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF171/D The RF MOSFET Line RF Power Field Effect Transistor N Channel Enhancement Mode MRF171 . . . designed primarily for wideband large signal output and driver stages up to 200 MHz frequency range. Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 45 Watts Minimum Gain = 12 dB 45 W, to 200 MHz Efficie

 9.5. Size:191K  motorola
 mrf177re.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF177/D The RF MOSFET Line RF Power MRF177 Field Effect Transistors MRF177M N Channel Enhancement Mode MOSFETs Designed for broadband commercial and military applications up to 400 MHz frequency range. Primarily used as drivers or output amplifiers in push pull configurations. Can be used in manual gain control, ALC a

 9.6. Size:156K  motorola
 mrf175lu.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF175LU/D The RF MOSFET Line RF Power MRF175LU Field-Effect Transistors MRF175LV N Channel Enhancement Mode . . . designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and broadband performance of each device makes possible solid st

 9.7. Size:158K  motorola
 mrf175l .pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF175LU/D The RF MOSFET Line RF Power MRF175LU Field-Effect Transistors MRF175LV N Channel Enhancement Mode Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and broadband performance of each device makes possible solid state tr

 9.8. Size:186K  motorola
 mrf177rev8.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF177/D The RF MOSFET Line MRF177 RF Power Field Effect Transistors N Channel Enhancement Mode MOSFET 100 W, 28 V, 400 MHz Designed for broadband commercial and military applications up to 400 MHz N CHANNEL frequency range. Primarily used as a driver or output amplifier in push pull BROADBAND configurations. Can b

 9.9. Size:123K  motorola
 mrf173.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF173/D The RF MOSFET Line RF Power MRF173 Field Effect Transistors N Channel Enhancement Mode MOSFETs Designed for broadband commercial and military applications up to 200 MHz frequency range. The high power, high gain and broadband performance of these devices make possible solid state transmitters for FM broadcast

 9.10. Size:186K  motorola
 mrf177.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF177/D The RF MOSFET Line MRF177 RF Power Field Effect Transistors N Channel Enhancement Mode MOSFET 100 W, 28 V, 400 MHz Designed for broadband commercial and military applications up to 400 MHz N CHANNEL frequency range. Primarily used as a driver or output amplifier in push pull BROADBAND configurations. Can b

 9.11. Size:173K  motorola
 mrf174re.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF174/D The RF MOSFET Line RF Power Field Effect Transistor N Channel Enhancement Mode MRF174 . . . designed primarily for wideband large signal output and driver stages up to 200 MHz frequency range. Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 125 Watts Minimum Gain = 9.0 dB 125 W, to 200 MHz Effi

 9.12. Size:158K  motorola
 mrf175lu mrf175lv.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF175LU/D The RF MOSFET Line RF Power MRF175LU Field-Effect Transistors MRF175LV N Channel Enhancement Mode Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and broadband performance of each device makes possible solid state tr

 9.13. Size:107K  motorola
 mrf173 mrf173cq.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF173/D The RF MOSFET Line RF Power MRF173 Field Effect Transistors MRF173CQ N Channel Enhancement Mode MOSFETs Designed for broadband commercial and military applications up to 200 MHz frequency range. The high power, high gain and broadband performance of these devices make possible solid state transmitters for FM

 9.14. Size:123K  motorola
 mrf173re.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF173/D The RF MOSFET Line RF Power MRF173 Field Effect Transistors N Channel Enhancement Mode MOSFETs Designed for broadband commercial and military applications up to 200 MHz frequency range. The high power, high gain and broadband performance of these devices make possible solid state transmitters for FM broadcast

 9.15. Size:172K  motorola
 mrf171.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF171/D The RF MOSFET Line RF Power Field Effect Transistor N Channel Enhancement Mode MRF171 . . . designed primarily for wideband large signal output and driver stages up to 200 MHz frequency range. Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 45 Watts Minimum Gain = 12 dB 45 W, to 200 MHz Efficie

 9.16. Size:183K  motorola
 mrf175gu mrf175gv.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF175GU/D The RF MOSFET Line RF Power MRF175GU Field-Effect Transistors MRF175GV N Channel Enhancement Mode Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state tra

 9.17. Size:173K  motorola
 mrf174.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF174/D The RF MOSFET Line RF Power Field Effect Transistor N Channel Enhancement Mode MRF174 . . . designed primarily for wideband large signal output and driver stages up to 200 MHz frequency range. Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 125 Watts Minimum Gain = 9.0 dB 125 W, to 200 MHz Effi

 9.18. Size:107K  motorola
 mrf173rev8.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF173/D The RF MOSFET Line RF Power MRF173 Field Effect Transistors MRF173CQ N Channel Enhancement Mode MOSFETs Designed for broadband commercial and military applications up to 200 MHz frequency range. The high power, high gain and broadband performance of these devices make possible solid state transmitters for FM

 9.19. Size:191K  motorola
 mrf177 mrf177m.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF177/D The RF MOSFET Line RF Power MRF177 Field Effect Transistors MRF177M N Channel Enhancement Mode MOSFETs Designed for broadband commercial and military applications up to 400 MHz frequency range. Primarily used as drivers or output amplifiers in push pull configurations. Can be used in manual gain control, ALC a

 9.20. Size:337K  macom
 mrf173.pdf

MRF173 The RF MOSFET Line M/A-COM Products Released - Rev. 07.07 80W, 175MHz, 28V Designed for broadband commercial and military applications up to Product Image 200 MHz frequency range. The high power, high gain and broadband performance of this device make possible solid state transmitters for FM broadcast or TV channel frequency bands. N Channel enhancement mode MOS

 9.21. Size:432K  macom
 mrf177.pdf

MRF177 The RF MOSFET Line M/A-COM Products Released - Rev. 07.07 100W, 400MHz, 28V Designed for broadband commercial and military applications up to 400 Product Image MHz frequency range. Primarily used as a driver or output amplifier in push pull configurations. Can be used in manual gain control, ALC and modulation circuits. N Channel enhancement mode MOSFET Typi

 9.22. Size:466K  macom
 mrf171a.pdf

MRF171A The RF MOSFET Line M/A-COM Products Released - Rev. 07.07 45W, 150MHz, 28V Designed primarily for wideband large signal output and driver stages from Product Image 30 200 MHz. N Channel enhancement mode MOSFET Guaranteed performance at 150 MHz, 28 Vdc Output power = 45 W Power gain = 17 dB (min) Efficiency = 60% (min) Excellent thermal stabilit