FQD13N06 Todos los transistores

 ..1. Size:731K  fairchild semi
 fqd13n06tf fqd13n06tm fqd13n06 fqu13n06 fqu13n06tu.pdf

January 2009 QFET FQD13N06 / FQU13N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 10A, 60V, RDS(on) = 0.14 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 5.8 nC) planar stripe, DMOS technology. Low Crss ( typical 15 pF) This advanced technology has been especially

 ..2. Size:944K  onsemi
 fqd13n06.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 0.1. Size:733K  fairchild semi
 fqd13n06ltf fqd13n06ltm fqd13n06l fqu13n06l fqu13n06ltu.pdf

January 2009 QFET FQD13N06L / FQU13N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 11A, 60V, RDS(on) = 0.115 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 4.8 nC) planar stripe, DMOS technology. Low Crss ( typical 17 pF) This advanced technology has been e

 0.2. Size:1008K  onsemi
 fqd13n06l fqu13n06l.pdf

FQD13N06L / FQU13N06L N-Channel QFET MOSFET 60 V, 11 A, 115 m Features 11 A, 60 V, RDS(on) = 115 m (Max) @ VGS = 10 V, Description ID = 5.5 A This N-Channel enhancement mode power MOSFET is Low Gate Charge (Typ. 4.8 nC) produced using ON Semiconductor s proprietary Low Crss (Typ. 17 pF) planar stripe and DMOS technology. This advanced MOSFET technology has b

 8.1. Size:714K  fairchild semi
 fqd13n10tf fqd13n10tm fqd13n10 fqu13n10 fqu13n10tu.pdf

January 2009 QFET FQD13N10 / FQU13N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 10A, 100V, RDS(on) = 0.18 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 12 nC) planar stripe, DMOS technology. Low Crss ( typical 20 pF) This advanced technology has been especiall

 8.2. Size:630K  fairchild semi
 fqd13n10l fqu13n10l.pdf

January 2009 QFET FQD13N10L / FQU13N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 10A, 100V, RDS(on) = 0.18 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 8.7 nC) planar stripe, DMOS technology. Low Crss ( typical 20 pF) This advanced technology is especi

 8.3. Size:984K  onsemi
 fqd13n10.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.4. Size:1231K  onsemi
 fqd13n10l fqu13n10l.pdf

January 2014 FQD13N10L / FQU13N10L N-Channel QFET MOSFET 100 V, 10 A, 180 m Description Features This N-Channel enhancement mode power MOSFET 10 A, 100 V, RDS(on) = 180 m (Max.) @ VGS = 10 V, is produced using Fairchild Semiconductor s proprietary ID = 5.0 A planar stripe and DMOS technology. This advanced Low Gate Charge (Typ. 8.7 nC) MOSFET technology has been

 8.5. Size:884K  cn vbsemi
 fqd13n10ltf.pdf

FQD13N10LTF www.VBsemi.tw N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 100 0.11 4 at VGS = 10 V 15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Primary Side Switch D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATIN

 8.6. Size:847K  cn vbsemi
 fqd13n10l.pdf

FQD13N10L www.VBsemi.tw N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 100 0.11 4 at VGS = 10 V 15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Primary Side Switch D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATING

 8.7. Size:278K  inchange semiconductor
 fqd13n10.pdf

isc N-Channel MOSFET Transistor FQD13N10 FEATURES Static drain-source on-resistance RDS(on) 0.18 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 100 V DSS V Gate-Source Voltage 25 V