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MRF5003 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MRF5003
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 12.5 W
   Voltaje máximo drenador - fuente |Vds|: 36 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 1.7 A
   Temperatura máxima de unión (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS


   Conductancia de drenaje-sustrato (Cd): 37 pF
   Resistencia entre drenaje y fuente RDS(on): 1.667 Ohm
   Paquete / Cubierta: CASE430-01

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MRF5003 Datasheet (PDF)

 ..1. Size:206K  motorola
mrf5003.pdf

MRF5003 MRF5003

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF5003/DThe RF MOSFET LineRF Power Field Effect TransistorNChannel EnhancementMode MRF5003The MRF5003 is designed for broadband commercial and industrialapplications at frequencies to 520 MHz. The high gain and broadbandperformance of this device makes it ideal for largesignal, common sourceamplifier applica

 0.1. Size:206K  motorola
mrf5003r.pdf

MRF5003 MRF5003

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF5003/DThe RF MOSFET LineRF Power Field Effect TransistorNChannel EnhancementMode MRF5003The MRF5003 is designed for broadband commercial and industrialapplications at frequencies to 520 MHz. The high gain and broadbandperformance of this device makes it ideal for largesignal, common sourceamplifier applica

 8.1. Size:161K  motorola
mrf5007 mrf5007r1.pdf

MRF5003 MRF5003

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF5007/DThe RF MOSFET LineMRF5007RF Power Field Effect TransistorMRF5007R1NChannel EnhancementModeThe MRF5007 is designed for broadband commercial and industrial7.0 W, 7.5 Vdcapplications at frequencies to 520 MHz. The high gain and broadband512 MHzperformance of this device makes it ideal for largesig

 8.2. Size:161K  motorola
mrf5007rev2.pdf

MRF5003 MRF5003

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF5007/DThe RF MOSFET LineMRF5007RF Power Field Effect TransistorMRF5007R1NChannel EnhancementModeThe MRF5007 is designed for broadband commercial and industrial7.0 W, 7.5 Vdcapplications at frequencies to 520 MHz. The high gain and broadband512 MHzperformance of this device makes it ideal for largesig

 8.3. Size:158K  motorola
mrf5007r.pdf

MRF5003 MRF5003

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF5007/DThe RF MOSFET LineMRF5007RF Power Field Effect TransistorNChannel EnhancementModeThe MRF5007 is designed for broadband commercial and industrial7.0 W, 7.5 Vdcapplications at frequencies to 520 MHz. The high gain and broadband512 MHzperformance of this device makes it ideal for largesignal, common

 8.4. Size:158K  motorola
mrf5007.pdf

MRF5003 MRF5003

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF5007/DThe RF MOSFET LineMRF5007RF Power Field Effect TransistorNChannel EnhancementModeThe MRF5007 is designed for broadband commercial and industrial7.0 W, 7.5 Vdcapplications at frequencies to 520 MHz. The high gain and broadband512 MHzperformance of this device makes it ideal for largesignal, common

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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