MRF5003 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MRF5003  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 12.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 36 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 1.7 A

Tjⓘ - Temperatura máxima de unión: 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Cossⓘ - Capacitancia de salida: 37 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.667 Ohm

Encapsulados: CASE430-01

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MRF5003 datasheet

 ..1. Size:206K  motorola
mrf5003.pdf pdf_icon

MRF5003

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF5003/D The RF MOSFET Line RF Power Field Effect Transistor N Channel Enhancement Mode MRF5003 The MRF5003 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large signal, common source amplifier applica

 0.1. Size:206K  motorola
mrf5003r.pdf pdf_icon

MRF5003

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF5003/D The RF MOSFET Line RF Power Field Effect Transistor N Channel Enhancement Mode MRF5003 The MRF5003 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large signal, common source amplifier applica

 8.1. Size:161K  motorola
mrf5007 mrf5007r1.pdf pdf_icon

MRF5003

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF5007/D The RF MOSFET Line MRF5007 RF Power Field Effect Transistor MRF5007R1 N Channel Enhancement Mode The MRF5007 is designed for broadband commercial and industrial 7.0 W, 7.5 Vdc applications at frequencies to 520 MHz. The high gain and broadband 512 MHz performance of this device makes it ideal for large sig

 8.2. Size:161K  motorola
mrf5007rev2.pdf pdf_icon

MRF5003

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF5007/D The RF MOSFET Line MRF5007 RF Power Field Effect Transistor MRF5007R1 N Channel Enhancement Mode The MRF5007 is designed for broadband commercial and industrial 7.0 W, 7.5 Vdc applications at frequencies to 520 MHz. The high gain and broadband 512 MHz performance of this device makes it ideal for large sig

Otros transistores... MRF175LV, MRF176GU, MRF176GV, MRF177, MRF177M, MRF184, MRF184S, MRF275G, IRF2807, MRF5007, MRF5007R1, MRF5015, MRF5035, 2N7002K1, BR10N60, BR20N50, BR2N7002AK2