BRCS035N08SHBD MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BRCS035N08SHBD
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 227 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 195 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 VQgⓘ - Carga de la puerta: 128 nC
trⓘ - Tiempo de subida: 19 nS
Cossⓘ - Capacitancia de salida: 2440 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0035 Ohm
Paquete / Cubierta: TO-263
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BRCS035N08SHBD Datasheet (PDF)
brcs035n08shbd.pdf
BRCS035N08SHBD Rev.A Feb.-2023 DATA SHEET / Descriptions TO-263 N N-CHANNEL MOSFET in a TO-263 Plastic Package. / Features , Ultra Low On-Resistance,fast switching, HF Product. / Applications BMS BMS appliances, High power inve
brcs035n08shra.pdf
BRCS035N08SHRA Rev.A Aug.-2022 DATA SHEET / Descriptions TO-220 N N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features , Ultra Low On-Resistance,fast switching. / Applications BMS BMS appliances, High power inverter system, Power applianc
brcs035n08shzc.pdf
BRCS035N08SHZC Rev.C Mar.-2023 DATA SHEET / Descriptions PDFN56 N N-Channel MOSFET in a PDFN56 Plastic Package . / Features Low R to minimize conductive loss;low Gate Charge for fast switching;Low Thermal DS(ON)resista
brcs035n04sdp.pdf
BRCS035N04SDP Rev.A Mar.-2023 DATA SHEET / Descriptions TO-252 N N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features R C DS(on) rssLow R ,low gate charge, low C , fast switching, HF Product. DS(on) rss / Applications
brcs035n06sdp.pdf
BRCS035N06SDP Rev.A Jan.-2022 DATA SHEET / Descriptions TO-252 N N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features R C DS(on) rssLow RDS(on),low gate charge, low Crss, fast switching, Halogen-free Product. / Applications
brcs035n03dp.pdf
BRCS035N03DP Rev.A Nov-2023 DATA SHEET / Descriptions TO-252 N MOS N-Channel Enhancement Mode Field Effect Transistor in a TO-252 Plastic Package. / Features V (V) = 30V I =122 A (V = 20V) DS D GS RDS(ON)@10V3.5mR(Typ.3.4mR) RDS(ON)@4.5V6.5mR(Typ.5.0mR) HF Product. / Applications
brcs035n06szc.pdf
BRCS035N06SZC Rev.C Feb.-2023 DATA SHEET / Descriptions PDFN56 N N-Channel MOSFET in a PDFN56 Plastic Package . / Features Low R to minimize conductive loss;low Gate Charge for fast switching;Low Thermal DS(ON)resistan
brcs035n03zc.pdf
BRCS035N03ZC Rev.A Dec.-2023 DATA SHEET / Descriptions PDFN56 N N-Channel MOSFET in a PDFN56 Plastic Package. / Features V (V)=30 V I =95A DS DRDS(ON)@10V3.6m(Typ.3.5mR) RDS(ON)@4.5V6.5m(Typ.5.0mR) HF Product. / Applications MB/NB/UMPC/VGA Buck
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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