BRCS060N15SHRA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: BRCS060N15SHRA
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 200 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 123 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 85 nC
   trⓘ - Tiempo de subida: 21 nS
   Cossⓘ - Capacitancia de salida: 2900 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0065 Ohm
   Paquete / Cubierta: TO-220

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BRCS060N15SHRA Datasheet (PDF)

..1. Size:1803K blue-rocket-elect
brcs060n15shra.pdf

BRCS060N15SHRA Rev.A Apr.-2023 DATA SHEET / Descriptions TO-220 N N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features V =150VI =123AV =20V DS D GSRDS(on)@10V6.2m(Type.5.8m) HF Product. / Applications Telecom,Industrial Power Supply,Load s

6.1. Size:798K blue-rocket-elect
brcs060n03zc.pdf

BRCS060N03ZC Rev.B May.-2021 DATA SHEET / Descriptions PDFN5*6 N N-Channel MOSFET in a PDFN5*6 Plastic Package . / Features Low RDS(ON) to minimize conductive loss;low Gate Charge for fast switching;Low Thermal resistance. / Applicat

6.2. Size:648K blue-rocket-elect
brcs060n03yb.pdf

BRCS060N03YB Rev.A Aug.-2021 DATA SHEET / Descriptions PDFN 33A-8L N MOS N-Channel Enhancement Mode Field Effect Transistor in a PDFN 33A-8L Plastic Package. / Features VDS (V) = 30V ID =40 A (VGS = 20V) RDS(ON)@10V6mR(Typ.4.7mR) HF Product. / Applications DC/DC

6.3. Size:1822K blue-rocket-elect
brcs060n04szc.pdf

BRCS060N04SZC Rev.C Jul.-2022 DATA SHEET / Descriptions PDFN56 N N-Channel MOSFET in a PDFN56 Plastic Package . / Features Low R to minimize conductive loss;low Gate Charge for fast switching;Low Thermal DS(ON)resistan

6.4. Size:1227K blue-rocket-elect
brcs060n03dp.pdf

BRCS060N03DP Rev.A Jun.-2022 DATA SHEET / Descriptions TO-252 N MOS N-Channel Enhancement Mode Field Effect Transistor in a TO-252 Plastic Package. / Features VDS (V) = 30V ID =67A (VGS = 20V) RDS(ON)@10V6mR HF Product. / Applications DC/DC , DC/DC C

6.5. Size:649K blue-rocket-elect
brcs060n03zb.pdf

BRCS060N03ZB Rev.A Nov.-2020 DATA SHEET / Descriptions DFN 3*3A-8L N MOS N-Channel Enhancement Mode Field Effect Transistor in a DFN 3*3A-8L Plastic Package. / Features VDS (V) = 30V ID =40 A (VGS = 20V) RDS(ON)@10V6mR(Typ.4.7mR) HF Product. / Applications DC/DC

6.6. Size:1297K blue-rocket-elect
brcs060n08hzc.pdf

BRCS060N08HZC Rev.A Jun.-2021 DATA SHEET / Descriptions PDFN56 N N-Channel MOSFET in a PDFN56 Plastic Package . / Features Low RDS(ON) to minimize conductive loss, low Gate Charge for fast switching, Low Thermal resistance,

6.7. Size:1746K blue-rocket-elect
brcs060n04ym.pdf

BRCS060N04YM Rev.D Mar.-2023 DATA SHEET / Descriptions PDFN56A N Dual N-CHANNEL MOSFET in a PDFN56A Plastic Package. / Features Dual N-Ch VDS(V)=40V ID=60.2A RDS(ON)

6.8. Size:1727K blue-rocket-elect
brcs060n04dp.pdf

BRCS060N04DP Rev.A Aug.-2023 DATA SHEET / Descriptions TO-252 N N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features VDS(V)=40V ID=70A RDS(ON)@10V

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