BRCS120P04ZC MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: BRCS120P04ZC
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 40 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 45 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 V
   Qgⓘ - Carga de la puerta: 34 nC
   trⓘ - Tiempo de subida: 7.8 nS
   Cossⓘ - Capacitancia de salida: 2800 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.025 Ohm
   Paquete / Cubierta: PDFN5X6

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BRCS120P04ZC Datasheet (PDF)

..1. Size:1550K blue-rocket-elect
brcs120p04zc.pdf

BRCS120P04ZC Rev.A Jul.-2022 DATA SHEET / Descriptions PDFN56 P P-Channel MOSFET in a PDFN56 Plastic Package. / Features Low RDS(ON) to minimize conductive loss;low Gate Charge for fast switching;Low Thermal resistance; H

4.1. Size:1059K blue-rocket-elect
brcs120p04dp.pdf

BRCS120P04DP Rev.A Aug.-2022 DATA SHEET / Descriptions TO-252 P MOS P-CHANNEL MOSFET in a TO-252 Plastic Package. / Features Low On-Resistance, fast switching,HF Product. / Applications DC/DC Power Management of Industrial DC/DC Converter.

4.2. Size:1734K blue-rocket-elect
brcs120p04yb.pdf

BRCS120P04YB Rev.A Dec.-2022 DATA SHEET / Descriptions PDFN 33A-8L P MOS P-Channel Enhancement Mode Field Effect Transistor in a PDFN 33A-8L Plastic Package. / Features V (V) = -40V DSI =-41A (V = 20V) D GS RDS(ON)@-10V13.5mR(Typ.11.6mR) HF Product. / Applications

5.1. Size:643K blue-rocket-elect
brcs120p012zj.pdf

BRCS120P012ZJ Rev.B Dec.-2021 DATA SHEET / Descriptions DFN 2*2B-6L P MOS P-Channel Enhancement Mode Field Effect Transistor in a DFN 2*2B-6L Plastic Package. / Features VDS (V) = -12V ID = -8 A (VGS = 10V) HF Product. / Applications Power

5.2. Size:2244K blue-rocket-elect
brcs120p03yb.pdf

BRCS120P03YB Rev.A Dec.-2021 DATA SHEET / Descriptions PDFN33A-8L P MOS P-Channel Enhancement Mode Field Effect Transistor in a PDFN33A-8L Plastic Package. / Features VDS (V) = -30V ID =-35 A (VGS = 20V) RDS(ON)@10V12mR(Typ.10mR) HFProduct. / Applications DC/DC

5.3. Size:1263K blue-rocket-elect
brcs120p03zc.pdf

BRCS120P03ZC Rev.A Dec.-2021 DATA SHEET / Descriptions PDFN56 P P-Channel MOSFET in a PDFN56 Plastic Package. / Features Low RDS(ON) to minimize conductive loss;low Gate Charge for fast switching;Low Thermal resistance. / Applica

5.4. Size:683K blue-rocket-elect
brcs120p012mc.pdf

BRCS120P012MC Rev.A Sep.-2020 DATA SHEET / Descriptions SOT23-3 P MOS P- CHANNEL MOSFET in a SOT23-3 Plastic Package. / Features VDS (V) = -12V ID = -6 A (VGS = 10V) HF Product. / Applications Power Management in Notebook computer, Portable Eq

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