BRCS12N65BD Todos los transistores

 

BRCS12N65BD MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BRCS12N65BD
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 156 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 12 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   trⓘ - Tiempo de subida: 133 nS
   Cossⓘ - Capacitancia de salida: 175 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.78 Ohm
   Paquete / Cubierta: TO-263

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BRCS12N65BD Datasheet (PDF)

 ..1. Size:1239K  blue-rocket-elect
brcs12n65bd.pdf

BRCS12N65BD
BRCS12N65BD

BRCS12N65BD Rev.A Aug.-2018 DATA SHEET / Descriptions TO-263 N MOS N-CHANNEL MOSFET in a TO-263 Plastic Package. / Features ,,Low gate charge, Low Crss , Fast switching. / Applications UPS High efficiency switch mode pow

 8.1. Size:643K  blue-rocket-elect
brcs120p012zj.pdf

BRCS12N65BD
BRCS12N65BD

BRCS120P012ZJ Rev.B Dec.-2021 DATA SHEET / Descriptions DFN 2*2B-6L P MOS P-Channel Enhancement Mode Field Effect Transistor in a DFN 2*2B-6L Plastic Package. / Features VDS (V) = -12V ID = -8 A (VGS = 10V) HF Product. / Applications Power

 8.2. Size:1299K  blue-rocket-elect
brcs120n03ya.pdf

BRCS12N65BD
BRCS12N65BD

BRCS120N03YA Rev.A May.-2022 DATA SHEET / Descriptions PDFN33-8L N MOS DoubleN-CHANNELMOSFETinaPDFN33-8LPlasticPackage. / Features VDS (V) = 30V ID =24A (VGS =20V) RDS(ON)@10V13mR(Typ.11mR) HFProduct. / Applications Intendedforuseing

 8.3. Size:1550K  blue-rocket-elect
brcs120p04zc.pdf

BRCS12N65BD
BRCS12N65BD

BRCS120P04ZC Rev.A Jul.-2022 DATA SHEET / Descriptions PDFN56 P P-Channel MOSFET in a PDFN56 Plastic Package. / Features Low RDS(ON) to minimize conductive loss;low Gate Charge for fast switching;Low Thermal resistance; H

 8.4. Size:2244K  blue-rocket-elect
brcs120p03yb.pdf

BRCS12N65BD
BRCS12N65BD

BRCS120P03YB Rev.A Dec.-2021 DATA SHEET / Descriptions PDFN33A-8L P MOS P-Channel Enhancement Mode Field Effect Transistor in a PDFN33A-8L Plastic Package. / Features VDS (V) = -30V ID =-35 A (VGS = 20V) RDS(ON)@10V12mR(Typ.10mR) HFProduct. / Applications DC/DC

 8.5. Size:576K  blue-rocket-elect
brcs120n02zj.pdf

BRCS12N65BD
BRCS12N65BD

BRCS120N02ZJ Rev.A Aug.-2020 DATA SHEET / Descriptions DFN 2*2B-6L N MOS N-Channel Enhancement Mode Field Effect Transistor in a DFN 2*2B-6L Plastic Package. / Features VDS (V) = 20V ID = 8 A (VGS = 20V) HF Product. / Applications DC/DC

 8.6. Size:693K  blue-rocket-elect
brcs120n03zj.pdf

BRCS12N65BD
BRCS12N65BD

BRCS120N03ZJRev.B Sep.-2020 DATA SHEET / DescriptionsDFN 2*2B-6L N MOS N-Channel Enhancement Mode Field Effect Transistor in a DFN 2*2B-6L Plastic Package. / FeaturesV (V) = 30VDSI = 8 A (V = 20V)D GSHF Product. / ApplicationsDC/DC

 8.7. Size:769K  blue-rocket-elect
brcs120n03zb.pdf

BRCS12N65BD
BRCS12N65BD

BRCS120N03ZB Rev.C Mar.-2022 DATA SHEET / Descriptions DFN 33A-8L N MOS N-Channel Enhancement Mode Field Effect Transistor in a DFN 33A-8L Plastic Package. / Features VDS (V) = 30V ID = 20 A (VGS =20V) RDS(ON)@10V13mR(Typ.11mR) HF Product. / Applications

 8.8. Size:1011K  blue-rocket-elect
brcs120n06ha.pdf

BRCS12N65BD
BRCS12N65BD

BRCS120N06HA Rev.A Nov.-2018 DATA SHEET / Descriptions TO-247 N N-CHANNEL MOSFET in a TO-247Plastic Package. / Features Low gate charge minimize switching loss and fast recovery body diode.HF Product. / Applications DC/DC

 8.9. Size:1263K  blue-rocket-elect
brcs120p03zc.pdf

BRCS12N65BD
BRCS12N65BD

BRCS120P03ZC Rev.A Dec.-2021 DATA SHEET / Descriptions PDFN56 P P-Channel MOSFET in a PDFN56 Plastic Package. / Features Low RDS(ON) to minimize conductive loss;low Gate Charge for fast switching;Low Thermal resistance. / Applica

 8.10. Size:621K  blue-rocket-elect
brcs120n02lzj.pdf

BRCS12N65BD
BRCS12N65BD

BRCS120N02LZJ Rev.C Nov.-2021 DATA SHEET / Descriptions DFN22B-6L N MOS N-Channel Enhancement Mode Field Effect Transistor in a DFN22B-6LPlastic Package. / Features VDS (V) =20V ID = 8 A (VGS =12V) HF Product. / Applications DC/DC

 8.11. Size:1747K  blue-rocket-elect
brcs120n03dp.pdf

BRCS12N65BD
BRCS12N65BD

BRCS120N03DP Rev.A Dec.-2022 DATA SHEET / Descriptions TO-252 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features V (V) = 30V DSI =42A (V = 20V) D GS RDS(ON)@10V12.5mR(Typ.11.7mR) HF Product. / Applications DC/DC These devices are well su

 8.12. Size:1257K  blue-rocket-elect
brcs120n03yb.pdf

BRCS12N65BD
BRCS12N65BD

BRCS120N03YB Rev.A Mar.-2022 DATA SHEET / Descriptions PDFN33A-8L N MOS N-Channel Enhancement Mode Field Effect Transistor in a PDFN 33A-8L Plastic Package. / Features VDS (V) = 30V ID =20 A (VGS = 20V) RDS(ON)@10V13mR(Typ.11mR) HFProduct. / Applications DC/DC

 8.13. Size:1069K  blue-rocket-elect
brcs120n06yb.pdf

BRCS12N65BD
BRCS12N65BD

BRCS120N06YB Rev.A Feb.-2022 DATA SHEET / Descriptions PDFN33A-8L N MOS N-Channel Enhancement Mode Field Effect Transistor in a PDFN 33A-8L Plastic Package. / Features VDS (V) = 60V ID =24 A (VGS = 20V) RDS(ON)@10V13mR(Typ.11.5mR) HFProduct. / Applications DC/DC

 8.14. Size:1059K  blue-rocket-elect
brcs120p04dp.pdf

BRCS12N65BD
BRCS12N65BD

BRCS120P04DP Rev.A Aug.-2022 DATA SHEET / Descriptions TO-252 P MOS P-CHANNEL MOSFET in a TO-252 Plastic Package. / Features Low On-Resistance, fast switching,HF Product. / Applications DC/DC Power Management of Industrial DC/DC Converter.

 8.15. Size:1734K  blue-rocket-elect
brcs120p04yb.pdf

BRCS12N65BD
BRCS12N65BD

BRCS120P04YB Rev.A Dec.-2022 DATA SHEET / Descriptions PDFN 33A-8L P MOS P-Channel Enhancement Mode Field Effect Transistor in a PDFN 33A-8L Plastic Package. / Features V (V) = -40V DSI =-41A (V = 20V) D GS RDS(ON)@-10V13.5mR(Typ.11.6mR) HF Product. / Applications

 8.16. Size:2103K  blue-rocket-elect
brcs120n06sra.pdf

BRCS12N65BD
BRCS12N65BD

BRCS120N06SRA Rev.A Apr.-2023 DATA SHEET / Descriptions N TO-220 N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features R C DS(on) rssLow R ,low gate charge, low C , fast switching,HF Product. DS(on) rss / Applications

 8.17. Size:1271K  blue-rocket-elect
brcs120n06sym.pdf

BRCS12N65BD
BRCS12N65BD

BRCS120N06SYM Rev.A May.-2022 DATA SHEET / Descriptions PDFN56A N Dual N-CHANNEL MOSFET in a PDFN56A Plastic Package. / Features Dual N-Ch VDS(V)=60V ID=24.5A RDS(ON)

 8.18. Size:683K  blue-rocket-elect
brcs120p012mc.pdf

BRCS12N65BD
BRCS12N65BD

BRCS120P012MC Rev.A Sep.-2020 DATA SHEET / Descriptions SOT23-3 P MOS P- CHANNEL MOSFET in a SOT23-3 Plastic Package. / Features VDS (V) = -12V ID = -6 A (VGS = 10V) HF Product. / Applications Power Management in Notebook computer, Portable Eq

 8.19. Size:1112K  blue-rocket-elect
brcs120n10szc.pdf

BRCS12N65BD
BRCS12N65BD

BRCS120N10SZC Rev.A Jun.-2021 DATA SHEET / Descriptions PDFN5*6 N N-Channel MOSFET in a PDFN5*6 Plastic Package . / Features Low RDS(ON) to minimize conductive loss;low Gate Charge for fast switching;Low Thermal resistance, H

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