FQA28N50 Todos los transistores

 

FQA28N50 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FQA28N50

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 310 W

Tensión drenaje-fuente (Vds): 500 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 28.4 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 5 V

Carga de compuerta (Qg): 110 nC

Resistencia drenaje-fuente RDS(on): 0.16 Ohm

Empaquetado / Estuche: TO3PN

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FQA28N50 Datasheet (PDF)

1.1. fqa28n50.pdf Size:472K _fairchild_semi

FQA28N50
FQA28N50

August 2014 FQA28N50 N-Channel QFET® MOSFET 500 V, 28.4 A, 160 mΩ Features Description • 28.4 A, 500 V, RDS(on) = 160 mΩ (Max.) @ VGS = 10 V, ID = These N-Channel enhancement mode power field effect 14.2 A transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low Gate Charge (Typ. 110 nC) This advanced technology has been especially tailored

1.2. fqa28n50 f109.pdf Size:778K _fairchild_semi

FQA28N50
FQA28N50

April 2000 TM QFET QFET QFET QFET 500V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 28.4A, 500V, RDS(on) = 0.16Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 110 nC) planar stripe, DMOS technology. • Low Crss ( typical 60 pF) This advanced technology has be

 1.3. fqa28n50f.pdf Size:670K _fairchild_semi

FQA28N50
FQA28N50

September 2001 TM FRFET FQA28N50F 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 28.4A, 500V, RDS(on) = 0.16Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 110 nC) planar stripe, DMOS technology. • Low Crss ( typical 60 pF) This advanced technology has been especially

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