FQA28N50 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

August 2014 FQA28N50 N-Channel QFET MOSFET 500 V, 28.4 A, 160 m Features Description 28.4 A, 500 V, RDS(on) = 160 m (Max.) @ VGS = 10 V, ID = These N-Channel enhancement mode power field effect 14.2 A transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. Low Gate Charge (Typ. 110 nC) This advanced technology has been especially tailored

April 2000 TM QFET QFET QFET QFET 500V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 28.4A, 500V, RDS(on) = 0.16 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 110 nC) planar stripe, DMOS technology. Low Crss ( typical 60 pF) This advanced technology has be

April 2000 TM QFET QFET QFET QFET 500V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 28.4A, 500V, RDS(on) = 0.16 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 110 nC) planar stripe, DMOS technology. Low Crss ( typical 60 pF) This advanced technology has be

September 2001 TM FRFET FQA28N50F 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 28.4A, 500V, RDS(on) = 0.16 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 110 nC) planar stripe, DMOS technology. Low Crss ( typical 60 pF) This advanced technology has been especially

isc N-Channel MOSFET Transistor FQA28N50F FEATURES With TO-3P packaging High speed switching Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-So

April 2011 TM QFET FQA28N15 150V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 33A, 150V, RDS(on) = 0.09 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 40 nC) planar stripe, DMOS technology. Low Crss ( typical 50 pF) This advanced technology has been especially tailored t

April 2011 TM QFET FQA28N15 150V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 33A, 150V, RDS(on) = 0.09 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 40 nC) planar stripe, DMOS technology. Low Crss ( typical 50 pF) This advanced technology has been especially tailored t

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur