BRCS30N02DP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: BRCS30N02DP
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 100 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 30 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.2 V
   Qgⓘ - Carga de la puerta: 36 nC
   trⓘ - Tiempo de subida: 8 nS
   Cossⓘ - Capacitancia de salida: 174 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.013 Ohm
   Paquete / Cubierta: TO-252

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BRCS30N02DP Datasheet (PDF)

..1. Size:837K blue-rocket-elect
brcs30n02dp.pdf

BRCS30N02DP Rev.A Sep.-2018 DATA SHEET / Descriptions N TO-252 N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features R C DS(on) rssLow RDS(on),low gate charge, low Crss, fast switching. / Applications DC/DC

5.1. Size:877K blue-rocket-elect
brcs30n02ip.pdf

BRCS30N02IP Rev.A Sep.-2018 DATA SHEET / Descriptions N TO-251 N-CHANNEL MOSFET in a TO-251 Plastic Package. / Features R C DS(on) rssLow RDS(on),low gate charge, low Crss, fast switching. / Applications DC/DC

7.1. Size:860K blue-rocket-elect
brcs30n10dp.pdf

BRCS30N10DP Rev.A Sep.-2018 DATA SHEET / Descriptions NTO-252 N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features RDS(on) Crss Low RDS(on) ,low gate charge, low C rss , fast switching. / Applications DC/DC

8.1. Size:1563K blue-rocket-elect
brcs300p016mc.pdf

BRCS300P016MC Rev.A Nov.-2023 DATA SHEET / Descriptions SOT23-3 P MOS P- CHANNEL MOSFET in a SOT23-3 Plastic Package. / Features V (V) = -16V I = -5A DS DRDS(ON)@-4.5V32m(Type.27m) RDS(ON)@-2.5V42m(Type.37.3m) RDS(ON)@-1.8V60m(Type.51m) HF Product. / Applications

8.2. Size:894K blue-rocket-elect
brcs30p10ip.pdf

BRCS30P10IP Rev.A Sep.-2018 DATA SHEET / Descriptions TO-251 P MOS P-CHANNEL MOSFET in a TO-251 Plastic Package. / Features R C DS(on) rssLow RDS(on),low gate charge, low Crss, fast switching. / Applications DC/DC

8.3. Size:560K blue-rocket-elect
brcs300p016zj.pdf

BRCS300P016ZJ Rev.A Sep.-2022 DATA SHEET / Descriptions DFN 22B-6L P MOS P-Channel Enhancement Mode Field Effect Transistor in a DFN 22B-6L Plastic Package. / Features V (V) = -16V I = -11A DS DRDS(ON)@-4.5V32m HF Product. / Applications

8.4. Size:627K blue-rocket-elect
brcs300p02zj.pdf

BRCS300P02ZJ Rev.A Aug.-2020 DATA SHEET / Descriptions DFN 2*2B-6L P MOS P-Channel Enhancement Mode Field Effect Transistor in a DFN 2*2B-6L Plastic Package. / Features VDS (V) = -20V ID = -8A RDS(ON)@-4.5V30m HF Product. / Applications

8.5. Size:851K blue-rocket-elect
brcs30p10dp.pdf

BRCS30P10DP Rev.A Sep.-2018 DATA SHEET / Descriptions TO-252 P MOS P-CHANNEL MOSFET in a TO-252 Plastic Package. / Features R C DS(on) rssLow RDS(on),low gate charge, low Crss, fast switching. / Applications DC/DC

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