RU30L40M-C MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: RU30L40M-C
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 35 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 40 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 V
   Qgⓘ - Carga de la puerta: 44 nC
   trⓘ - Tiempo de subida: 34 nS
   Cossⓘ - Capacitancia de salida: 270 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.01 Ohm
   Paquete / Cubierta: DFN5060

Búsqueda de reemplazo de MOSFET RU30L40M-C

RU30L40M-C Datasheet (PDF)

..1. Size:751K ruichips
ru30l40m-c.pdf

RU30L40M-CP-Channel Advanced Power MOSFETFeatures Pin Description -30V/-40A,RDS (ON) =5.2m(Typ.)@VGS=-10VGSSRDS (ON) =7.5m(Typ.)@VGS=-4.5VS Uses Ruichips advanced TrenchTM technology D Excellent QgxRDS(on) product(FOM) Low On-Resistance DDDD ESD protected 100% avalanche testedPIN1 Lead Free and Green Devices (RoHS Compliant)DFN506

6.1. Size:678K ruichips
ru30l40m3.pdf

RU30L40M3P-Channel Advanced Power MOSFETFeatures Pin Description -30V/-40A,RDS (ON) =6.5m(Typ.)@VGS=-10VGSSRDS (ON) =9.5m(Typ.)@VGS=-4.5VS Uses Ruichips advanced TrenchTM technology D Excellent QgxRDS(on) product(FOM) Reliable and Rugged DDDD 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant)PIN1DFN3030Appli

9.1. Size:307K ruichips
ru30l15h.pdf

RU30L15HP-Channel Advanced Power MOSFETMOSFETFeatures Pin Description -30V/-14.5A,RDS (ON) =13m (Typ.) @ VGS=-10VRDS (ON) =22m (Typ.) @ VGS=-4.5V Super High Dense Cell Design Reliable and Rugged ESD ProtectedSOP-8 Lead Free and Green AvailableApplications Load Switching. PWM Applications.P-Channel MOSFETAbsolute Maximum RatingsSymbol

9.2. Size:270K ruichips
ru30l30m.pdf

RU30L30MP-Channel Advanced Power MOSFETMOSFETFeatures Pin Description -30V/-30A,RDS (ON) =12m(Typ.)@VGS=-10VRDS (ON) =20m(Typ.)@VGS=-4.5V Super High Dense Cell Design Reliable and Rugged 100% avalanche testedPDFN3333 Lead Free and Green Devices Available(RoHS Compliant)Applications Power Management Load SwitchingP-Channel MOSFETAbsolute

9.3. Size:760K ruichips
ru30l30m3.pdf

RU30L30M3P-Channel Advanced Power MOSFETFeatures Pin Description -30V/-30A,RDS (ON) =14m(Typ.)@VGS=-10VRDS (ON) =18m(Typ.)@VGS=-4.5V Uses Ruichips advanced TrenchTM technologyGS Excellent QgxRDS(on) product(FOM)SS Reliable and RuggedR li bl d R dSD 100% avalanche testedPIN1 Lead Free and Green Devices Available (RoHS Compliant)DD

9.4. Size:337K ruichips
ru30l70l.pdf

RU30L70LP-Channel Advanced Power MOSFETFeatures Pin Description -30V/-70A, RDS (ON) =5.5m(Typ.)@VGS=-10V D RDS (ON) =9m(Typ.)@VGS=-4.5V Low On-Resistance Super High Dense Cell Design ESD Protected ESD Protected 100% Avalanche Tested 175C Operating TemperatureG Lead Free and Green Devices Available (RoHS Compliant)STO252Applications

9.5. Size:863K cn vbsemi
ru30l15h.pdf

RU30L15Hwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Available0.0125 at VGS = - 10 V - 11.6 TrenchFET Power MOSFET- 30 22 nC 100 % Rg Tested0.0180 at VGS = - 4.5 V - 10 100 % UIS TestedAPPLICATIONS Load SwitchesS - Notebook PCsSO-8- Desktop PCs

9.6. Size:899K cn vbsemi
ru30l30m.pdf

RU30L30Mwww.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e,f Qg (Typ.),Typ.Definition0.0075 at VGS = - 10 V -35 TrenchFET Power MOSFET- 30 24.6 nC Low Thermal Resistance PowerPAK0.0105 at VGS = - 4.5V - 30Package with Small Size and Low 1.07 mm Profile 100 % Rg

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