RU40L60M Todos los transistores

 ..1. Size:765K  ruichips
 ru40l60m.pdf

RU40L60M P-Channel Advanced Power MOSFET Features Pin Description -40V/-60A, RDS (ON) =8.5m (Typ.)@VGS=-10V RDS (ON) =11m (Typ.)@VGS=-4.5V Uses Ruichips advanced TrenchTM technology G S Excellent QgxRDS(on) product(FOM) S S Reliable and Rugged R li bl d R d S D 100% avalanche tested PIN1 Lead Free and Green Devices Available (RoHS Compliant) D D

 7.1. Size:403K  ruichips
 ru40l60l.pdf

RU40L60L P-Channel Advanced Power MOSFET Features Pin Description -40V/-60A, D RDS (ON) =8.5m (Typ.)@VGS=-10V RDS (ON) =11m (Typ.)@VGS=-4.5V Uses Ruichips advanced TrenchTM technology Ultra Low On-Resistance Reliable and Rugged R li bl d R d 100% avalanche tested Lead Free and Green Devices (RoHS Compliant) G S TO252 D D D D D D Applications

 9.1. Size:309K  ruichips
 ru40l10l.pdf

RU40L10L P-Channel Advanced Power MOSFET MOSFET Features Pin Description -40V/-32A, RDS (ON) =20m (Typ.)@VGS=-10V RDS (ON) =30m (Typ.)@VGS=-4.5V Super High Dense Cell Design ESD protected Reliable and Rugged TO252 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) Applications Power Supplies Inverter P-Channel MOSFET

 9.2. Size:307K  ruichips
 ru40l10h.pdf

RU40L10H P-Channel Advanced Power MOSFET MOSFET Features Pin Description -40V/-9.5A, RDS (ON) =19m (Typ.) @ VGS=-10V RDS (ON) =30m (Typ.) @ VGS=-4.5V Super High Dense Cell Design Reliable and Rugged ESD Protected SOP-8 Lead Free and Green Available Applications DC-DC Converter. P-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating Unit

 9.3. Size:883K  cn vbsemi
 ru40l10l.pdf

RU40L10L www.VBsemi.tw P-Channel 4 0 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) -40 Package with low thermal resistance RDS(on) ( ) at VGS = -10 V 0.012 100 % Rg and UIS tested RDS(on) ( ) at VGS = -4.5 V 0.015 ID (A) -50 Configuration Single TO-252 S G D D G S P-Channel MOSFET Top View ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unl