RUH120N70R Todos los transistores

 

RUH120N70R MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RUH120N70R

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 182 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 120 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 70 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 58 nS

Cossⓘ - Capacitancia de salida: 170 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.018 Ohm

Encapsulados: TO220

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RUH120N70R datasheet

 ..1. Size:372K  ruichips
ruh120n70r.pdf pdf_icon

RUH120N70R

RUH120N70R N-Channel Advanced Power MOSFET Features Pin Description 120V/70A, RDS (ON) =15m (Typ.)@VGS=10V Uses Ruichips advanced RUISGTTM technology Ultra Low On-Resistance Excellent QgxRDS(on) Product 100% avalanche tested 100% l h t t d 175 C Operating Temperature Lead Free and Green Devices Available (RoHS Compliant) G D S TO220 D D D D D

 7.1. Size:255K  ruichips
ruh120n35l.pdf pdf_icon

RUH120N70R

RUH120N35L N-Channel Advanced Power MOSFET Features Pin Description 120V/35A, D RDS (ON) =28m (Typ.)@VGS=10V Using Ruichips Advanced RUISGTTM Technology Ultra Low On-Resistance Excellent Qg&RDS(on) Performance 100% Avalanche Tested Fast Switching Speed Lead Free and Green Devices (RoHS Compliant) G S TO252 D Applications Atomizer Switch S

 7.2. Size:325K  ruichips
ruh120n140s.pdf pdf_icon

RUH120N70R

RUH120N140S N-Channel Advanced Power MOSFET Features Pin Description 120V/140A, D RDS (ON) =3.4m (Typ.)@VGS=10V RDS (ON) =3.7m (Typ.)@VGS=4.5V Uses Ruichips advanced RUISGTTM technology Ultra Low On-Resistance Excellent QgxRDS(on) Product E ll t Q R P d t 100% avalanche tested 175 C Operating Temperature G Lead Free and Green Devices Available (RoH

 7.3. Size:266K  ruichips
ruh120n81l.pdf pdf_icon

RUH120N70R

RUH120N81L N-Channel Advanced Power MOSFET Features Pin Description 120V/80A, D RDS (ON) =9.5m (Typ.)@VGS=10V RDS (ON) =11m (Typ.)@VGS=4.5V Uses Ruichips advanced RUISGTTM technology Ultra Low On-Resistance Excellent Qg&RDS(on) Performance Low Gate Charge Minimizing Switching Loss 100% Avalanche Tested G Lead Free and Green Devices (RoHS Compliant)

Otros transistores... RU82100R , RU9N65P , RUH008N15M-C , RUH120N140R , RUH120N140S , RUH120N140T , RUH120N35L , RUH120N35M3 , IRF740 , RUH120N81L , RUH120N90M , RUH120N90R , RUH1H130S , RUH1H138M-C , RUH1H138S , RUH1H139R , RUH1H139R-A .

 

 

 


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