RUH120N81L Todos los transistores

RUH120N81L N-Channel Advanced Power MOSFET Features Pin Description 120V/80A, D RDS (ON) =9.5m (Typ.)@VGS=10V RDS (ON) =11m (Typ.)@VGS=4.5V Uses Ruichips advanced RUISGTTM technology Ultra Low On-Resistance Excellent Qg&RDS(on) Performance Low Gate Charge Minimizing Switching Loss 100% Avalanche Tested G Lead Free and Green Devices (RoHS Compliant)

RUH120N35L N-Channel Advanced Power MOSFET Features Pin Description 120V/35A, D RDS (ON) =28m (Typ.)@VGS=10V Using Ruichips Advanced RUISGTTM Technology Ultra Low On-Resistance Excellent Qg&RDS(on) Performance 100% Avalanche Tested Fast Switching Speed Lead Free and Green Devices (RoHS Compliant) G S TO252 D Applications Atomizer Switch S

RUH120N140S N-Channel Advanced Power MOSFET Features Pin Description 120V/140A, D RDS (ON) =3.4m (Typ.)@VGS=10V RDS (ON) =3.7m (Typ.)@VGS=4.5V Uses Ruichips advanced RUISGTTM technology Ultra Low On-Resistance Excellent QgxRDS(on) Product E ll t Q R P d t 100% avalanche tested 175 C Operating Temperature G Lead Free and Green Devices Available (RoH

RUH120N70R N-Channel Advanced Power MOSFET Features Pin Description 120V/70A, RDS (ON) =15m (Typ.)@VGS=10V Uses Ruichips advanced RUISGTTM technology Ultra Low On-Resistance Excellent QgxRDS(on) Product 100% avalanche tested 100% l h t t d 175 C Operating Temperature Lead Free and Green Devices Available (RoHS Compliant) G D S TO220 D D D D D

RUH120N140R N-Channel Advanced Power MOSFET Features Pin Description 120V/140A, RDS (ON) =3.6m (Typ.)@VGS=10V RDS (ON) =3.8m (Typ.)@VGS=4.5V Uses Ruichips advanced RUISGTTM technology Ultra Low On-Resistance Excellent QgxRDS( ) Product Excellent QgxRDS(on) Product 100% avalanche tested 175 C Operating Temperature Lead Free and Green Devices Avail

RUH120N140T N-Channel Advanced Power MOSFET Features Pin Description 120V/140A, 11 RDS (ON) =3.4m (Typ.)@VGS=10V 9 10 RDS (ON) =4m (Typ.)@VGS=4.5V 10 9 Using Ruichips Advanced RUISGTTM Technology Ultra Low On-Resistance 11 1 1 Excellent Qg&RDS(on) Performance E ll t Q &R P f 2 8 34 76 Low Gate Charge Minimizing Switching Loss 56 54 100% Avalanch

RUH120N35M3 N-Channel Advanced Power MOSFET Features Pin Description 120V/35A, RDS (ON) =30m (Typ.)@VGS=10V Using Ruichips Advanced RUISGTTM Technology Ultra Low On-Resistance G Excellent Qg&RDS(on) Performance S S Low Gate Charge Minimizing Switching Loss S 100% Avalanche Tested Lead Free and Green Devices (RoHS Compliant) DD DD PIN1 DFN3030 D

RUH120N90M N-Channel Advanced Power MOSFET Features Pin Description 120V/90A, RDS (ON) =6.2m (Typ.)@VGS=10V D RDS (ON) =7m (Typ.)@VGS=4.5V D D Ultra Low On-Resistance D Fast Switching Speed 100% Avalanche Tested G Uses Ruichips advanced RUISGTTM technology S S Lead Free and Green Devices (RoHS Compliant) S PIN1 DFN5060 D Applications Synchr

RUH120N90R N-Channel Advanced Power MOSFET Features Pin Description 120V/90A, RDS (ON) =6.5m (Typ.)@VGS=10V RDS (ON) =7.5m (Typ.)@VGS=4.5V Using Ruichips Advanced RUISGTTM Technology Ultra Low On-Resistance Excellent Qg&RDS(on) Performance E ll t Q &R P f 100% Avalanche Tested 175 C Operating Temperature Lead Free and Green Devices (RoHS Compliant)