RUH120N81L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

RUH120N81LN-Channel Advanced Power MOSFETFeatures Pin Description 120V/80A,D RDS (ON) =9.5m(Typ.)@VGS=10V RDS (ON) =11m(Typ.)@VGS=4.5V Uses Ruichips advanced RUISGTTM technology Ultra Low On-Resistance Excellent Qg&RDS(on) Performance Low Gate Charge Minimizing Switching Loss 100% Avalanche TestedG Lead Free and Green Devices (RoHS Compliant)

RUH120N35LN-Channel Advanced Power MOSFETFeatures Pin Description 120V/35A,D RDS (ON) =28m(Typ.)@VGS=10V Using Ruichips Advanced RUISGTTM Technology Ultra Low On-Resistance Excellent Qg&RDS(on) Performance 100% Avalanche Tested Fast Switching Speed Lead Free and Green Devices (RoHS Compliant)GSTO252DApplications Atomizer Switch S

RUH120N140SN-Channel Advanced Power MOSFETFeatures Pin Description 120V/140A,DRDS (ON) =3.4m(Typ.)@VGS=10VRDS (ON) =3.7m(Typ.)@VGS=4.5V Uses Ruichips advanced RUISGTTM technology Ultra Low On-Resistance Excellent QgxRDS(on) ProductE ll t Q R P d t 100% avalanche tested 175C Operating TemperatureG Lead Free and Green Devices Available (RoH

RUH120N70RN-Channel Advanced Power MOSFETFeatures Pin Description 120V/70A,RDS (ON) =15m(Typ.)@VGS=10V Uses Ruichips advanced RUISGTTM technology Ultra Low On-Resistance Excellent QgxRDS(on) Product 100% avalanche tested100% l h t t d 175C Operating Temperature Lead Free and Green Devices Available (RoHS Compliant)GDSTO220DDDDD

RUH120N140RN-Channel Advanced Power MOSFETFeatures Pin Description 120V/140A,RDS (ON) =3.6m(Typ.)@VGS=10VRDS (ON) =3.8m(Typ.)@VGS=4.5V Uses Ruichips advanced RUISGTTM technology Ultra Low On-Resistance Excellent QgxRDS( ) Product Excellent QgxRDS(on) Product 100% avalanche tested 175C Operating Temperature Lead Free and Green Devices Avail

RUH120N140TN-Channel Advanced Power MOSFETFeatures Pin Description 120V/140A,11RDS (ON) =3.4m(Typ.)@VGS=10V910RDS (ON) =4m(Typ.)@VGS=4.5V109 Using Ruichips Advanced RUISGTTM Technology Ultra Low On-Resistance1111 Excellent Qg&RDS(on) PerformanceE ll t Q &R P f2 834 76 Low Gate Charge Minimizing Switching Loss56 54 100% Avalanch

RUH120N35M3N-Channel Advanced Power MOSFETFeatures Pin Description 120V/35A,RDS (ON) =30m(Typ.)@VGS=10V Using Ruichips Advanced RUISGTTM Technology Ultra Low On-ResistanceG Excellent Qg&RDS(on) PerformanceSS Low Gate Charge Minimizing Switching LossS 100% Avalanche Tested Lead Free and Green Devices (RoHS Compliant)DDDDPIN1DFN3030D

RUH120N90MN-Channel Advanced Power MOSFETFeatures Pin Description 120V/90A,RDS (ON) =6.2m(Typ.)@VGS=10VDRDS (ON) =7m(Typ.)@VGS=4.5VDD Ultra Low On-ResistanceD Fast Switching Speed 100% Avalanche TestedG Uses Ruichips advanced RUISGTTM technologySS Lead Free and Green Devices (RoHS Compliant)SPIN1DFN5060DApplications Synchr

RUH120N90RN-Channel Advanced Power MOSFETFeatures Pin Description 120V/90A,RDS (ON) =6.5m(Typ.)@VGS=10VRDS (ON) =7.5m(Typ.)@VGS=4.5V Using Ruichips Advanced RUISGTTM Technology Ultra Low On-Resistance Excellent Qg&RDS(on) PerformanceE ll t Q &R P f 100% Avalanche Tested 175C Operating Temperature Lead Free and Green Devices (RoHS Compliant)