RUH1H138M-C Todos los transistores

 

RUH1H138M-C MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RUH1H138M-C
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 198 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 130 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 40 nS
   Cossⓘ - Capacitancia de salida: 770 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0045 Ohm
   Paquete / Cubierta: DFN5060
     - Selección de transistores por parámetros

 

RUH1H138M-C Datasheet (PDF)

 ..1. Size:218K  ruichips
 ruh1h138m-c.pdf pdf_icon

RUH1H138M-C

RUH1H138M-CN-Channel Advanced Power MOSFETFeatures Pin Description 100V/130A,RDS (ON) =3.6m(Typ.)@VGS=10VDRDS (ON) =4.5m(Typ.)@VGS=4.5VDD Uses Ruichips advanced RUISGTTM technology D Ultra Low On-Resistance Fast Switching SpeedG 100% Avalanche TestedSS Lead Free and Green Devices (RoHS Compliant)SPIN1DFN5060DApplications Syn

 6.1. Size:312K  ruichips
 ruh1h138s.pdf pdf_icon

RUH1H138M-C

RUH1H138SN-Channel Advanced Power MOSFETFeatures Pin Description 100V/138A,DRDS (ON) =4.2m(Typ.)@VGS=10VRDS (ON) =4.6m(Typ.)@VGS=4.5V Uses Ruichips advanced RUISGTTM technology Ultra Low On-Resistance Excellent QgxRDS(on) ProductE ll t Q R P d t 100% avalanche tested 175C Operating TemperatureG Lead Free and Green Devices Available (RoHS

 7.1. Size:312K  ruichips
 ruh1h130s.pdf pdf_icon

RUH1H138M-C

RUH1H130SN-Channel Advanced Power MOSFETFeatures Pin Description 100V/130A,DRDS (ON) =5.8m(Typ.)@VGS=10VRDS (ON) =6.5m(Typ.)@VGS=4.5V Uses Ruichips advanced RUISGTTM technology Ultra Low On-Resistance Excellent QgxRDS(on) ProductE ll t Q R P d t 100% avalanche tested 175C Operating TemperatureG Lead Free and Green Devices Available (RoHS

 7.2. Size:378K  ruichips
 ruh1h139r.pdf pdf_icon

RUH1H138M-C

RUH1H139RN-Channel Advanced Power MOSFETFeatures Pin Description 100V/138A, RDS (ON) =4.6m(Typ.)@VGS=10V Uses Ruichips advanced RUISGTTM Technology Ultra Low On-Resistance Excellent QgxRDS(on) Product 100% Avalanche Tested100% A l h T t d 175C Operating Temperature Lead Free and Green Devices (RoHS Compliant)GDSTO220DDDDDDApp

MOSTRAR MÁS

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: IRLI3803PBF | NCE80H12

 

 
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