RUH1H138M-C Todos los transistores

 

RUH1H138M-C MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RUH1H138M-C

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 198 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 130 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 40 nS

Cossⓘ - Capacitancia de salida: 770 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0045 Ohm

Encapsulados: DFN5060

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RUH1H138M-C datasheet

 ..1. Size:218K  ruichips
 ruh1h138m-c.pdf pdf_icon

RUH1H138M-C

RUH1H138M-C N-Channel Advanced Power MOSFET Features Pin Description 100V/130A, RDS (ON) =3.6m (Typ.)@VGS=10V D RDS (ON) =4.5m (Typ.)@VGS=4.5V D D Uses Ruichips advanced RUISGTTM technology D Ultra Low On-Resistance Fast Switching Speed G 100% Avalanche Tested S S Lead Free and Green Devices (RoHS Compliant) S PIN1 DFN5060 D Applications Syn

 6.1. Size:312K  ruichips
 ruh1h138s.pdf pdf_icon

RUH1H138M-C

RUH1H138S N-Channel Advanced Power MOSFET Features Pin Description 100V/138A, D RDS (ON) =4.2m (Typ.)@VGS=10V RDS (ON) =4.6m (Typ.)@VGS=4.5V Uses Ruichips advanced RUISGTTM technology Ultra Low On-Resistance Excellent QgxRDS(on) Product E ll t Q R P d t 100% avalanche tested 175 C Operating Temperature G Lead Free and Green Devices Available (RoHS

 7.1. Size:312K  ruichips
 ruh1h130s.pdf pdf_icon

RUH1H138M-C

RUH1H130S N-Channel Advanced Power MOSFET Features Pin Description 100V/130A, D RDS (ON) =5.8m (Typ.)@VGS=10V RDS (ON) =6.5m (Typ.)@VGS=4.5V Uses Ruichips advanced RUISGTTM technology Ultra Low On-Resistance Excellent QgxRDS(on) Product E ll t Q R P d t 100% avalanche tested 175 C Operating Temperature G Lead Free and Green Devices Available (RoHS

 7.2. Size:378K  ruichips
 ruh1h139r.pdf pdf_icon

RUH1H138M-C

RUH1H139R N-Channel Advanced Power MOSFET Features Pin Description 100V/138A, RDS (ON) =4.6m (Typ.)@VGS=10V Uses Ruichips advanced RUISGTTM Technology Ultra Low On-Resistance Excellent QgxRDS(on) Product 100% Avalanche Tested 100% A l h T t d 175 C Operating Temperature Lead Free and Green Devices (RoHS Compliant) G D S TO220 D D D D D D App

MOSTRAR MÁS

Otros transistores... RUH120N140T , RUH120N35L , RUH120N35M3 , RUH120N70R , RUH120N81L , RUH120N90M , RUH120N90R , RUH1H130S , 50N06 , RUH1H138S , RUH1H139R , RUH1H139R-A , RUH1H139S , RUH1H150M-C , RUH1H150R-A , RUH1H150S , RUH1H150S-AR .

History: FHF5N65C | SE12N65

 

 

 

 

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