RUH1H220R Todos los transistores

 

RUH1H220R MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RUH1H220R
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 517 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 220 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 52 nS
   Cossⓘ - Capacitancia de salida: 1550 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.003 Ohm
   Paquete / Cubierta: TO220
 

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RUH1H220R Datasheet (PDF)

 ..1. Size:391K  ruichips
 ruh1h220r.pdf pdf_icon

RUH1H220R

RUH1H220RN-Channel Advanced Power MOSFETFeatures Pin Description 100V/220A, RDS (ON) =2.5m(Typ.)@VGS=10V Using Ruichips Advanced RUISGTTM Technology Ultra Low On-Resistance Excellent Qg&RDS(on) Performance Low Gate Charge Minimizing Switching LossL G t Ch Mi i i i S it hi L 100% Avalanche Tested Lead Free and Green Devices (RoHS Compliant)GDS

 6.1. Size:333K  ruichips
 ruh1h220s.pdf pdf_icon

RUH1H220R

RUH1H220SN-Channel Advanced Power MOSFETFeatures Pin Description 100V/220A,D RDS (ON) =2.4m(Typ.)@VGS=10V Using Ruichips Advanced RUISGTTM Technology Ultra Low On-Resistance Excellent Qg&RDS(on) Performance Low Gate Charge Minimizing Switching LossL G t Ch Mi i i i S it hi L 100% Avalanche Tested Lead Free and Green Devices (RoHS Compliant)GS

 9.1. Size:312K  ruichips
 ruh1h138s.pdf pdf_icon

RUH1H220R

RUH1H138SN-Channel Advanced Power MOSFETFeatures Pin Description 100V/138A,DRDS (ON) =4.2m(Typ.)@VGS=10VRDS (ON) =4.6m(Typ.)@VGS=4.5V Uses Ruichips advanced RUISGTTM technology Ultra Low On-Resistance Excellent QgxRDS(on) ProductE ll t Q R P d t 100% avalanche tested 175C Operating TemperatureG Lead Free and Green Devices Available (RoHS

 9.2. Size:396K  ruichips
 ruh1h150r-a.pdf pdf_icon

RUH1H220R

RUH1H150R-AN-Channel Advanced Power MOSFETFeatures Pin Description 100V/150A, RDS (ON) =3.4m(Typ.)@VGS=10V Using Ruichips Advanced RUISGTTM Technology Ultra Low On-Resistance Excellent Qg&RDS(on) Performance Low Gate Charge Minimizing Switching LossL G t Ch Mi i i i S it hi L 100% Avalanche Tested Lead Free and Green Devices (RoHS Compliant)GD

MOSTRAR MÁS

Otros transistores... RUH1H139R , RUH1H139R-A , RUH1H139S , RUH1H150M-C , RUH1H150R-A , RUH1H150S , RUH1H150S-AR , RUH1H150T , AON6414A , RUH1H220S , RUH1H300T , RUH3025M3 , RUH3030M3 , RUH3051M , RUH3090M , RUH3090M3-C , RUH30J105M .

History: HSP18N20 | AM7411P | 2N4343 | 2SK2533 | STL35N15F3 | STU5N60M2 | SI2351DS-T1

 

 
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