RUH1H220R Todos los transistores

 

RUH1H220R MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RUH1H220R

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 517 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V

|Id|ⓘ - Corriente continua de drenaje: 220 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 52 nS

Cossⓘ - Capacitancia de salida: 1550 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.003 Ohm

Encapsulados: TO220

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RUH1H220R datasheet

 ..1. Size:391K  ruichips
 ruh1h220r.pdf pdf_icon

RUH1H220R

RUH1H220R N-Channel Advanced Power MOSFET Features Pin Description 100V/220A, RDS (ON) =2.5m (Typ.)@VGS=10V Using Ruichips Advanced RUISGTTM Technology Ultra Low On-Resistance Excellent Qg&RDS(on) Performance Low Gate Charge Minimizing Switching Loss L G t Ch Mi i i i S it hi L 100% Avalanche Tested Lead Free and Green Devices (RoHS Compliant) G D S

 6.1. Size:333K  ruichips
 ruh1h220s.pdf pdf_icon

RUH1H220R

RUH1H220S N-Channel Advanced Power MOSFET Features Pin Description 100V/220A, D RDS (ON) =2.4m (Typ.)@VGS=10V Using Ruichips Advanced RUISGTTM Technology Ultra Low On-Resistance Excellent Qg&RDS(on) Performance Low Gate Charge Minimizing Switching Loss L G t Ch Mi i i i S it hi L 100% Avalanche Tested Lead Free and Green Devices (RoHS Compliant) G S

 9.1. Size:312K  ruichips
 ruh1h138s.pdf pdf_icon

RUH1H220R

RUH1H138S N-Channel Advanced Power MOSFET Features Pin Description 100V/138A, D RDS (ON) =4.2m (Typ.)@VGS=10V RDS (ON) =4.6m (Typ.)@VGS=4.5V Uses Ruichips advanced RUISGTTM technology Ultra Low On-Resistance Excellent QgxRDS(on) Product E ll t Q R P d t 100% avalanche tested 175 C Operating Temperature G Lead Free and Green Devices Available (RoHS

 9.2. Size:396K  ruichips
 ruh1h150r-a.pdf pdf_icon

RUH1H220R

RUH1H150R-A N-Channel Advanced Power MOSFET Features Pin Description 100V/150A, RDS (ON) =3.4m (Typ.)@VGS=10V Using Ruichips Advanced RUISGTTM Technology Ultra Low On-Resistance Excellent Qg&RDS(on) Performance Low Gate Charge Minimizing Switching Loss L G t Ch Mi i i i S it hi L 100% Avalanche Tested Lead Free and Green Devices (RoHS Compliant) G D

MOSTRAR MÁS

Otros transistores... RUH1H139R , RUH1H139R-A , RUH1H139S , RUH1H150M-C , RUH1H150R-A , RUH1H150S , RUH1H150S-AR , RUH1H150T , IRFB4227 , RUH1H220S , RUH1H300T , RUH3025M3 , RUH3030M3 , RUH3051M , RUH3090M , RUH3090M3-C , RUH30J105M .

 

 

 

 

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