RUH3090M3-C Todos los transistores

 

RUH3090M3-C MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RUH3090M3-C
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 105 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 90 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 19 nS
   Cossⓘ - Capacitancia de salida: 395 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0032 Ohm
   Paquete / Cubierta: DFN3030
 

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RUH3090M3-C Datasheet (PDF)

 ..1. Size:708K  ruichips
 ruh3090m3-c.pdf pdf_icon

RUH3090M3-C

RUH3090M3-CN-Channel Advanced Power MOSFETFeatures Pin Description 30V/90A,RDS (ON) =2.7m(Typ.)@VGS=10V DDDRDS (ON) =4m(Typ.)@VGS=4.5VD Uses Ruichips Advanced RUISGTTM Technology Low Gate Charge Minimizing Switching LossG Ultra Low On-ResistanceSS Excellent QgxRDS(on) product(FOM) S 100% Avalanche TestedPIN1 Lead Free and Green Devi

 6.1. Size:285K  ruichips
 ruh3090m.pdf pdf_icon

RUH3090M3-C

RUH3090MN-Channel Advanced Power MOSFETFeatures Pin Description 30V/90A,DDRDS (ON) =2.6m(Typ.)@VGS=10VDDRDS (ON) =3.6m(Typ.)@VGS=4.5V Using Ruichips Advanced SGTTM TechnologyG Ultra Low On-ResistanceSS 100% Avalanche TestedS Reliable and Rugged Qualified According to JEDEC CriteriaPIN1 Lead Free and Green Devices (RoHS Compliant

 9.1. Size:384K  ruichips
 ruh30150m.pdf pdf_icon

RUH3090M3-C

RUH30150MN-Channel Advanced Power MOSFETFeatures Pin Description 30V/150A,RDS (ON) =0.9m(Typ.)@VGS=10V DDDDRDS (ON) =1.4m(Typ.)@VGS=4.5V Ultra Low On-Resistance Fast Switching Speed 100% avalanche testedG Lead Free and Green Devices Available (RoHS Compliant)SSSPIN1PIN1PDFN5060DApplications DC/DC Converters On board power

 9.2. Size:286K  ruichips
 ruh30j105m.pdf pdf_icon

RUH3090M3-C

RUH30J105MDual Asymmetric N-Channel MOSFETFeatures Pin Description Die 1 30V/30ARDS (ON) =6m(Typ.)@VGS=10VRDS (ON) =9m(Typ.)@VGS=4.5V Die 2 30V/120ARDS (ON) =2.2m(Typ.)@VGS=10VRDS (ON) =3.0m(Typ.)@VGS=4.5V Ultra Low On-Resistance Uses Ruichips advanced SGT technology 100% avalanche testedPIN1 Lead Free and Green Devices Available (RoHS Com

MOSTRAR MÁS

Otros transistores... RUH1H150T , RUH1H220R , RUH1H220S , RUH1H300T , RUH3025M3 , RUH3030M3 , RUH3051M , RUH3090M , 2SK3878 , RUH30J105M , RUH30J120M , RUH30J51M , RUH30J85M , RUH30J95M , RUH40190M , RUH4022M3 , RUH4025M3 .

History: IRF7351PBF | SJMN380R80ZB | IRFBA1404P | SI1539CDL-T1 | SIR422DP-T1-GE3 | SST70R1K2S2E | WM06N03FB

 

 
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