RUH30J85M MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: RUH30J85M
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 37 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 80 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 24 nS
   Cossⓘ - Capacitancia de salida: 590 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.012 Ohm
   Paquete / Cubierta: DFN5060

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RUH30J85M Datasheet (PDF)

..1. Size:286K ruichips
ruh30j85m.pdf

RUH30J85MDual Asymmetric N-Channel MOSFETFeatures Pin Description Die 1 30V/30ARDS (ON) =6m(Typ.)@VGS=10VRDS (ON) =9m(Typ.)@VGS=4.5V Die 2 30V/90ARDS (ON) =3.5m(Typ.)@VGS=10VRDS (ON) =5m(Typ.)@VGS=4.5V Ultra Low On-Resistance Uses Ruichips advanced SGT technology 100% avalanche testedPIN1 Lead Free and Green Devices Available (RoHS Complia

8.1. Size:286K ruichips
ruh30j105m.pdf

RUH30J105MDual Asymmetric N-Channel MOSFETFeatures Pin Description Die 1 30V/30ARDS (ON) =6m(Typ.)@VGS=10VRDS (ON) =9m(Typ.)@VGS=4.5V Die 2 30V/120ARDS (ON) =2.2m(Typ.)@VGS=10VRDS (ON) =3.0m(Typ.)@VGS=4.5V Ultra Low On-Resistance Uses Ruichips advanced SGT technology 100% avalanche testedPIN1 Lead Free and Green Devices Available (RoHS Com

8.2. Size:286K ruichips
ruh30j95m.pdf

RUH30J95MDual Asymmetric N-Channel MOSFETFeatures Pin Description Die 1 30V/30ARDS (ON) =6m(Typ.)@VGS=10VRDS (ON) =9m(Typ.)@VGS=4.5V Die 2 30V/90ARDS (ON) =2.8m(Typ.)@VGS=10VRDS (ON) =4.2m(Typ.)@VGS=4.5V Ultra Low On-Resistance Uses Ruichips advanced SGT technology 100% avalanche testedPIN1 Lead Free and Green Devices Available (RoHS Compl

8.3. Size:716K ruichips
ruh30j120m.pdf

RUH30J120MDual Asymmetric N-Channel MOSFETFeatures Pin Description Die 1 30V/50ARDS (ON) =3.8m(Typ.)@VGS=10VRDS (ON) =5.5m(Typ.)@VGS=4.5V Die 2 30V/120ARDS (ON) =2.2m(Typ.)@VGS=10VRDS (ON) =3.0m(Typ.)@VGS=4.5V Ultra Low On-Resistance Uses Ruichips advanced SGT technology 100% avalanche testedPIN1 Lead Free and Green Devices Available (RoHS

8.4. Size:684K ruichips
ruh30j51m.pdf

RUH30J51M Dual Symmetric N-Channel MOSFETFeatures Pin Description 30V/50A,S2S2RDS (ON) =5m(Typ.)@VGS=10VS2G2RDS (ON) =8m(Typ.)@VGS=4.5V Ultra Low On-Resistance Fast Switching SpeedD1D1D1 100% avalanche tested 100% avalanche testedD1 Lead Free and Green Devices Available (RoHS Compliant)G1PIN1DFN5*6Applicationspp DC/DC Co

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