RUH4040M3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RUH4040M3
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 34 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 40 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 VQgⓘ - Carga de la puerta: 17 nC
trⓘ - Tiempo de subida: 34 nS
Cossⓘ - Capacitancia de salida: 118 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm
Paquete / Cubierta: DFN3030
Búsqueda de reemplazo de MOSFET RUH4040M3
RUH4040M3 Datasheet (PDF)
ruh4040m3.pdf
RUH4040M3N-Channel Advanced Power MOSFETFeatures Pin Description 40V/40A,RDS (ON) =7m(Typ.)@VGS=10V DDDRDS (ON) =12m(Typ.)@VGS=4.5VD Ultra Low On-Resistance Excellent QgxRDS(on) product(FOM)G 100% avalanche testedSS Lead Free and Green Devices Available (RoHS Compliant) SPIN1DFN3030DApplications DC/DC Converters On board power
ruh4040m2.pdf
RUH4040M2N-Channel Advanced Power MOSFETFeatures Pin Description 40V/40A,RDS (ON) =5.5m(Typ.)@VGS=10V DDDDRDS (ON) =8m(Typ.)@VGS=4.5V Ultra Low On-Resistance Fast Switching Speed 100% avalanche testedG Lead Free and Green Devices Available (RoHS Compliant)SSSPIN1PIN1PDFN3333DApplications DC/DC Converters On board power for
ruh4022m3.pdf
RUH4022M3N-Channel Advanced Power MOSFETFeatures Pin Description 40V/20A,DRDS (ON) =16m(Typ.)@VGS=10VDDRDS (ON) =23m(Typ.)@VGS=4.5VD Uses Ruichips Advanced RUISGTTM Technology Low Gate Charge Minimizing Switching LossG Ultra Low On-Resistance SSS Excellent QgxRDS(on) product(FOM) 100% Avalanche TestedPIN1 Lead Free and Green Devices
ruh40140m.pdf
RUH40140MN-Channel Advanced Power MOSFETFeatures Pin Description 40V/140A,RDS (ON) =1.4m(Typ.)@VGS=10V DDDDRDS (ON) =1.9m(Typ.)@VGS=4.5V Ultra Low On-Resistance Fast Switching Speed 100% avalanche testedG Lead Free and Green Devices Available (RoHS Compliant)SSSPIN1PIN1PDFN5060DApplications DC/DC Converters On board power
ruh4025m3.pdf
RUH4025M3N-Channel Advanced Power MOSFETFeatures Pin Description 40V/25A,DRDS (ON) =15m(Typ.)@VGS=10VDDRDS (ON) =21m(Typ.)@VGS=4.5VD Uses Ruichips Advanced RUISGTTM Technology Low Gate Charge Minimizing Switching LossG Ultra Low On-Resistance SSS ESD protected 100% Avalanche TestedPIN1 Lead Free and Green Devices (RoHS Compliant)D
ruh40130m.pdf
RUH40130MN-Channel Advanced Power MOSFETFeatures Pin Description 40V/130A,RDS (ON) =1.9m(Typ.)@VGS=10V DDDDRDS (ON) =2.7m(Typ.)@VGS=4.5V Ultra Low On-Resistance Fast Switching Speed 100% avalanche testedG Lead Free and Green Devices Available (RoHS Compliant)SSSPIN1PIN1PDFN5060DApplications DC/DC Converters On board power
ruh40e12c.pdf
RUH40E12CN-Channel Advanced Power MOSFETFeatures Pin Description 40V/12A, RDS (ON) =17m(Typ.)@VGS=10VD RDS (ON) =24m(Typ.)@VGS=4.5V Uses Ruichips Advanced SGTTM Technology Ultra Low On-Resistance Very Fast SwitchingG ESD protected Lead Free and Green Devices (RoHS Compliant)S SOT23-3DApplications Load Switch Power ManagementG
ruh40d40m.pdf
RUH40D40MDual N-Channel Advanced Power MOSFETFeatures Pin Description 40V/40A,D2RDS (ON) =6m(Typ.)@VGS=10VD2D1RDS (ON) =8m(Typ.)@VGS=4.5VD1 Uses Ruichips Advanced RUISGTTM Technology Low Gate Charge Minimizing Switching LossG2 Ultra Low On-ResistanceS2G1 Excellent QgxRDS(on) product(FOM)S1 100% Avalanche TestedPIN1 Lead Free and
ruh40330t.pdf
RUH40330TN-Channel Advanced Power MOSFETFeatures Pin Description 40V/330A,11RDS (ON) =0.95m(Typ.)@VGS=10V910RDS (ON) =1.4m(Typ.)@VGS=4.5V109 Uses Ruichips Proprietary New Trench Technology Ultra Low On-Resistance1111 Exceptional dv/dt Capability Exceptional dv/dt Capability2 834 76 Low Gate Charge Minimize Switching Loss56 54
ruh40300t.pdf
RUH40300TN-Channel Advanced Power MOSFETFeatures Pin Description 40V/300A,11RDS (ON) =1.5m(Typ.)@VGS=10V910 Using Ruichips Proprietary New Trench Technology10 Ultra Low On-Resistance 9 Excellent Qg&RDS(on) Performance1111 Low Gate Charge Minimizing Switching Loss Low Gate Charge Minimizing Switching Loss2 834 76 100% Avalanche Tested
ruh40190m.pdf
RUH40190MN-Channel Advanced Power MOSFETFeatures Pin Description 40V/190A,DDRDS (ON) =1.7m(Typ.)@VGS=10VDD Uses Ruichips Proprietary New Trench Technology Ultra Low On-Resistance Exceptional dv/dt CapabilityGS Low Gate Charge Minimize Switching LossSS 100% Avalanche Tested Lead Free and Green Devices (RoHS Compliant)PIN1DFN5060DA
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Liste
Recientemente añadidas las descripciónes de los transistores:
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