RUH40E12C Todos los transistores

 

RUH40E12C MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RUH40E12C
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.6 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 12 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 9 nS
   Cossⓘ - Capacitancia de salida: 63 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.028 Ohm
   Paquete / Cubierta: SOT23

 Búsqueda de reemplazo de MOSFET RUH40E12C

 

RUH40E12C Datasheet (PDF)

 ..1. Size:265K  ruichips
ruh40e12c.pdf

RUH40E12C
RUH40E12C

RUH40E12CN-Channel Advanced Power MOSFETFeatures Pin Description 40V/12A, RDS (ON) =17m(Typ.)@VGS=10VD RDS (ON) =24m(Typ.)@VGS=4.5V Uses Ruichips Advanced SGTTM Technology Ultra Low On-Resistance Very Fast SwitchingG ESD protected Lead Free and Green Devices (RoHS Compliant)S SOT23-3DApplications Load Switch Power ManagementG

 9.1. Size:319K  ruichips
ruh4022m3.pdf

RUH40E12C
RUH40E12C

RUH4022M3N-Channel Advanced Power MOSFETFeatures Pin Description 40V/20A,DRDS (ON) =16m(Typ.)@VGS=10VDDRDS (ON) =23m(Typ.)@VGS=4.5VD Uses Ruichips Advanced RUISGTTM Technology Low Gate Charge Minimizing Switching LossG Ultra Low On-Resistance SSS Excellent QgxRDS(on) product(FOM) 100% Avalanche TestedPIN1 Lead Free and Green Devices

 9.2. Size:218K  ruichips
ruh4040m3.pdf

RUH40E12C
RUH40E12C

RUH4040M3N-Channel Advanced Power MOSFETFeatures Pin Description 40V/40A,RDS (ON) =7m(Typ.)@VGS=10V DDDRDS (ON) =12m(Typ.)@VGS=4.5VD Ultra Low On-Resistance Excellent QgxRDS(on) product(FOM)G 100% avalanche testedSS Lead Free and Green Devices Available (RoHS Compliant) SPIN1DFN3030DApplications DC/DC Converters On board power

 9.3. Size:384K  ruichips
ruh40140m.pdf

RUH40E12C
RUH40E12C

RUH40140MN-Channel Advanced Power MOSFETFeatures Pin Description 40V/140A,RDS (ON) =1.4m(Typ.)@VGS=10V DDDDRDS (ON) =1.9m(Typ.)@VGS=4.5V Ultra Low On-Resistance Fast Switching Speed 100% avalanche testedG Lead Free and Green Devices Available (RoHS Compliant)SSSPIN1PIN1PDFN5060DApplications DC/DC Converters On board power

 9.4. Size:319K  ruichips
ruh4025m3.pdf

RUH40E12C
RUH40E12C

RUH4025M3N-Channel Advanced Power MOSFETFeatures Pin Description 40V/25A,DRDS (ON) =15m(Typ.)@VGS=10VDDRDS (ON) =21m(Typ.)@VGS=4.5VD Uses Ruichips Advanced RUISGTTM Technology Low Gate Charge Minimizing Switching LossG Ultra Low On-Resistance SSS ESD protected 100% Avalanche TestedPIN1 Lead Free and Green Devices (RoHS Compliant)D

 9.5. Size:383K  ruichips
ruh40130m.pdf

RUH40E12C
RUH40E12C

RUH40130MN-Channel Advanced Power MOSFETFeatures Pin Description 40V/130A,RDS (ON) =1.9m(Typ.)@VGS=10V DDDDRDS (ON) =2.7m(Typ.)@VGS=4.5V Ultra Low On-Resistance Fast Switching Speed 100% avalanche testedG Lead Free and Green Devices Available (RoHS Compliant)SSSPIN1PIN1PDFN5060DApplications DC/DC Converters On board power

 9.6. Size:240K  ruichips
ruh40d40m.pdf

RUH40E12C
RUH40E12C

RUH40D40MDual N-Channel Advanced Power MOSFETFeatures Pin Description 40V/40A,D2RDS (ON) =6m(Typ.)@VGS=10VD2D1RDS (ON) =8m(Typ.)@VGS=4.5VD1 Uses Ruichips Advanced RUISGTTM Technology Low Gate Charge Minimizing Switching LossG2 Ultra Low On-ResistanceS2G1 Excellent QgxRDS(on) product(FOM)S1 100% Avalanche TestedPIN1 Lead Free and

 9.7. Size:414K  ruichips
ruh4040m2.pdf

RUH40E12C
RUH40E12C

RUH4040M2N-Channel Advanced Power MOSFETFeatures Pin Description 40V/40A,RDS (ON) =5.5m(Typ.)@VGS=10V DDDDRDS (ON) =8m(Typ.)@VGS=4.5V Ultra Low On-Resistance Fast Switching Speed 100% avalanche testedG Lead Free and Green Devices Available (RoHS Compliant)SSSPIN1PIN1PDFN3333DApplications DC/DC Converters On board power for

 9.8. Size:260K  ruichips
ruh40330t.pdf

RUH40E12C
RUH40E12C

RUH40330TN-Channel Advanced Power MOSFETFeatures Pin Description 40V/330A,11RDS (ON) =0.95m(Typ.)@VGS=10V910RDS (ON) =1.4m(Typ.)@VGS=4.5V109 Uses Ruichips Proprietary New Trench Technology Ultra Low On-Resistance1111 Exceptional dv/dt Capability Exceptional dv/dt Capability2 834 76 Low Gate Charge Minimize Switching Loss56 54

 9.9. Size:259K  ruichips
ruh40300t.pdf

RUH40E12C
RUH40E12C

RUH40300TN-Channel Advanced Power MOSFETFeatures Pin Description 40V/300A,11RDS (ON) =1.5m(Typ.)@VGS=10V910 Using Ruichips Proprietary New Trench Technology10 Ultra Low On-Resistance 9 Excellent Qg&RDS(on) Performance1111 Low Gate Charge Minimizing Switching Loss Low Gate Charge Minimizing Switching Loss2 834 76 100% Avalanche Tested

 9.10. Size:287K  ruichips
ruh40190m.pdf

RUH40E12C
RUH40E12C

RUH40190MN-Channel Advanced Power MOSFETFeatures Pin Description 40V/190A,DDRDS (ON) =1.7m(Typ.)@VGS=10VDD Uses Ruichips Proprietary New Trench Technology Ultra Low On-Resistance Exceptional dv/dt CapabilityGS Low Gate Charge Minimize Switching LossSS 100% Avalanche Tested Lead Free and Green Devices (RoHS Compliant)PIN1DFN5060DA

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: NCEPB302G | 40600 | P1603BEBA | SVF20NE50PN | JFPC8N65C | IRF5305 | HQB7N65C

 

 
Back to Top

 


History: NCEPB302G | 40600 | P1603BEBA | SVF20NE50PN | JFPC8N65C | IRF5305 | HQB7N65C

RUH40E12C
  RUH40E12C
  RUH40E12C
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: QM1830M3 | SUN830I | SUN830F | SUN830DN | SUN830D | SUN82A20CI | SUN50A20CI | SUN09A40D | SUN05A50ZF | SUN05A50ZD | SUN05A25F | SRN1865FD | SRN1860FD | SRN1860F | SRN1665FD | SRN1660FD

 

 

 
Back to Top