RUH6080R Todos los transistores

 

RUH6080R MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RUH6080R
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 176 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 80 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 27 nS
   Cossⓘ - Capacitancia de salida: 390 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.008 Ohm
   Paquete / Cubierta: TO220
 

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RUH6080R Datasheet (PDF)

 ..1. Size:372K  ruichips
 ruh6080r.pdf pdf_icon

RUH6080R

RUH6080RN-Channel Advanced Power MOSFETFeatures Pin Description 60V/80A, RDS (ON) =6.2m(Typ.)@VGS=10V RDS (ON) =7m(Typ.)@VGS=4.5V Uses Ruichips Advanced RUISGTTM Technology Low Gate Charge Minimizing Switching Loss Ultra Low On-ResistanceUlt L O R i t Exceptional dv/dt Capability Fast Switching and Fully Avalanche Rated 100% Avalanche Tested

 7.1. Size:225K  ruichips
 ruh6080m3-c.pdf pdf_icon

RUH6080R

RUH6080M3-CN-Channel Advanced Power MOSFETFeatures Pin Description 60V/80A,RDS (ON) =5.3m(Typ.)@VGS=10V DDDRDS (ON) =6.5m(Typ.)@VGS=4.5VD Uses Ruichips Advanced RUISGTTM Technology Low Gate Charge Minimizing Switching LossG Ultra Low On-ResistanceSS Excellent QgxRDS(on) product(FOM) S 100% Avalanche TestedPIN1 Lead Free and Green De

 9.1. Size:283K  ruichips
 ruh60120m.pdf pdf_icon

RUH6080R

RUH60120MN-Channel Advanced Power MOSFETFeatures Pin Description 60V/120A,RDS (ON) =4m(Typ.)@VGS=10VGRDS (ON) =4.5m(Typ.)@VGS=4.5V SSS Uses Ruichips Advanced RUISGTTM TechnologyD Low Gate Charge Minimizing Switching Loss Ultra Low On-ResistanceDD Excellent QgxRDS(on) product(FOM)DD 100% Avalanche TestedPIN1 Lead Free and Green Devic

 9.2. Size:321K  ruichips
 ruh60120l.pdf pdf_icon

RUH6080R

RUH60120LN-Channel Advanced Power MOSFETFeatures Pin Description 60V/120A,DRDS (ON) =3.2m(Typ.)@VGS=10VRDS (ON) =3.6m(Typ.)@VGS=4.5V Uses Ruichips Advanced RUISGTTM Technology Ultra Low On-Resistance Excellent QgxRDS(on) Product 100% Avalanche Tested 175C Operating TemperatureG Lead Free and Green Devices (RoHS Compliant) STO252DAppli

MOSTRAR MÁS

Otros transistores... RUH40300T , RUH40330T , RUH4040M3 , RUH40D40M , RUH40E12C , RUH60120L , RUH60120M , RUH6080M3-C , SPP20N60C3 , RUH60D60M , RUH85100M-C , RUH85120M-C , RUH85120S , RUH85150R , RUH85210R , RUH85230S , RUH85350T .

History: STF12NM60N | BSC120N03MS | SI2310A | STF2NK60Z | WSD30L90DN56 | WNMD2162

 

 
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