RUH6080R
MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RUH6080R
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 176
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 60
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20
V
|Id|ⓘ - Corriente continua de drenaje: 80
A
Tjⓘ - Temperatura máxima de unión: 175
°C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 27
nS
Cossⓘ - Capacitancia
de salida: 390
pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.008
Ohm
Paquete / Cubierta:
TO220
RUH6080R
Datasheet (PDF)
..1. Size:372K ruichips
ruh6080r.pdf 
RUH6080RN-Channel Advanced Power MOSFETFeatures Pin Description 60V/80A, RDS (ON) =6.2m(Typ.)@VGS=10V RDS (ON) =7m(Typ.)@VGS=4.5V Uses Ruichips Advanced RUISGTTM Technology Low Gate Charge Minimizing Switching Loss Ultra Low On-ResistanceUlt L O R i t Exceptional dv/dt Capability Fast Switching and Fully Avalanche Rated 100% Avalanche Tested
7.1. Size:225K ruichips
ruh6080m3-c.pdf
RUH6080M3-CN-Channel Advanced Power MOSFETFeatures Pin Description 60V/80A,RDS (ON) =5.3m(Typ.)@VGS=10V DDDRDS (ON) =6.5m(Typ.)@VGS=4.5VD Uses Ruichips Advanced RUISGTTM Technology Low Gate Charge Minimizing Switching LossG Ultra Low On-ResistanceSS Excellent QgxRDS(on) product(FOM) S 100% Avalanche TestedPIN1 Lead Free and Green De
9.1. Size:283K ruichips
ruh60120m.pdf
RUH60120MN-Channel Advanced Power MOSFETFeatures Pin Description 60V/120A,RDS (ON) =4m(Typ.)@VGS=10VGRDS (ON) =4.5m(Typ.)@VGS=4.5V SSS Uses Ruichips Advanced RUISGTTM TechnologyD Low Gate Charge Minimizing Switching Loss Ultra Low On-ResistanceDD Excellent QgxRDS(on) product(FOM)DD 100% Avalanche TestedPIN1 Lead Free and Green Devic
9.2. Size:321K ruichips
ruh60120l.pdf
RUH60120LN-Channel Advanced Power MOSFETFeatures Pin Description 60V/120A,DRDS (ON) =3.2m(Typ.)@VGS=10VRDS (ON) =3.6m(Typ.)@VGS=4.5V Uses Ruichips Advanced RUISGTTM Technology Ultra Low On-Resistance Excellent QgxRDS(on) Product 100% Avalanche Tested 175C Operating TemperatureG Lead Free and Green Devices (RoHS Compliant) STO252DAppli
9.3. Size:384K ruichips
ruh60100m.pdf
RUH60100MN-Channel Advanced Power MOSFETFeatures Pin Description 60V/100A,RDS (ON) =2.6m(Typ.)@VGS=10V DDDDRDS (ON) =3.6m(Typ.)@VGS=4.5V Ultra Low On-Resistance Fast Switching Speed 100% avalanche testedG Lead Free and Green Devices Available (RoHS Compliant)SSSPIN1PIN1PDFN5060DApplications LED backlighting On board power
9.4. Size:240K ruichips
ruh60d60m.pdf
RUH60D60MDual N-Channel Advanced Power MOSFETFeatures Pin Description 60V/60A,D2RDS (ON) =7.2m(Typ.)@VGS=10VD2D1RDS (ON) =8.2m(Typ.)@VGS=4.5VD1 Uses Ruichips Advanced RUISGTTM Technology Low Gate Charge Minimizing Switching LossG2 Ultra Low On-ResistanceS2G1 Excellent QgxRDS(on) product(FOM)S1 100% Avalanche TestedPIN1 Lead Free
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