RUH60D60M Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RUH60D60M  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 78 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 60 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 25 nS

Cossⓘ - Capacitancia de salida: 380 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm

Encapsulados: DFN5060

  📄📄 Copiar 

 Búsqueda de reemplazo de RUH60D60M MOSFET

- Selecciónⓘ de transistores por parámetros

 

RUH60D60M datasheet

 ..1. Size:240K  ruichips
 ruh60d60m.pdf pdf_icon

RUH60D60M

RUH60D60M Dual N-Channel Advanced Power MOSFET Features Pin Description 60V/60A, D2 RDS (ON) =7.2m (Typ.)@VGS=10V D2 D1 RDS (ON) =8.2m (Typ.)@VGS=4.5V D1 Uses Ruichips Advanced RUISGTTM Technology Low Gate Charge Minimizing Switching Loss G2 Ultra Low On-Resistance S2 G1 Excellent QgxRDS(on) product(FOM) S1 100% Avalanche Tested PIN1 Lead Free

 9.1. Size:283K  ruichips
 ruh60120m.pdf pdf_icon

RUH60D60M

RUH60120M N-Channel Advanced Power MOSFET Features Pin Description 60V/120A, RDS (ON) =4m (Typ.)@VGS=10V G RDS (ON) =4.5m (Typ.)@VGS=4.5V S S S Uses Ruichips Advanced RUISGTTM Technology D Low Gate Charge Minimizing Switching Loss Ultra Low On-Resistance DD Excellent QgxRDS(on) product(FOM) DD 100% Avalanche Tested PIN1 Lead Free and Green Devic

 9.2. Size:225K  ruichips
 ruh6080m3-c.pdf pdf_icon

RUH60D60M

RUH6080M3-C N-Channel Advanced Power MOSFET Features Pin Description 60V/80A, RDS (ON) =5.3m (Typ.)@VGS=10V D D D RDS (ON) =6.5m (Typ.)@VGS=4.5V D Uses Ruichips Advanced RUISGTTM Technology Low Gate Charge Minimizing Switching Loss G Ultra Low On-Resistance S S Excellent QgxRDS(on) product(FOM) S 100% Avalanche Tested PIN1 Lead Free and Green De

 9.3. Size:321K  ruichips
 ruh60120l.pdf pdf_icon

RUH60D60M

RUH60120L N-Channel Advanced Power MOSFET Features Pin Description 60V/120A, D RDS (ON) =3.2m (Typ.)@VGS=10V RDS (ON) =3.6m (Typ.)@VGS=4.5V Uses Ruichips Advanced RUISGTTM Technology Ultra Low On-Resistance Excellent QgxRDS(on) Product 100% Avalanche Tested 175 C Operating Temperature G Lead Free and Green Devices (RoHS Compliant) S TO252 D Appli

MOSTRAR MÁS

Otros transistores... RUH40330T, RUH4040M3, RUH40D40M, RUH40E12C, RUH60120L, RUH60120M, RUH6080M3-C, RUH6080R, P55NF06, RUH85100M-C, RUH85120M-C, RUH85120S, RUH85150R, RUH85210R, RUH85230S, RUH85350T, RUQ4040M2