RUH85150R Todos los transistores

 

RUH85150R MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RUH85150R
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 306 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 85 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 150 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 38 nS
   Cossⓘ - Capacitancia de salida: 770 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.004 Ohm
   Paquete / Cubierta: TO220
 

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Principales características: RUH85150R

 ..1. Size:375K  ruichips
ruh85150r.pdf pdf_icon

RUH85150R

RUH85150R N-Channel Advanced Power MOSFET Features Pin Description 85V/150A, RDS (ON) =3.4m (Typ.)@VGS=10V Uses Ruichips advanced RUISGTTM Technology Ultra Low On-Resistance Excellent QgxRDS(on) Product 100% Avalanche Tested 100% A l h T t d 175 C Operating Temperature Lead Free and Green Devices (RoHS Compliant) G D S TO220 D D D D D D Appl

 8.1. Size:279K  ruichips
ruh85120m-c.pdf pdf_icon

RUH85150R

RUH85120M-C N-Channel Advanced Power MOSFET Features Pin Description 85V/120A, G RDS (ON) =4m (Typ.)@VGS=10V S S RDS (ON) =5.5m (Typ.)@VGS=4.5V S D Ultra Low On-Resistance Fast Switching Speed DD 100% Avalanche Tested DD Uses Ruichips advanced SGTTM technology Lead Free and Green Devices (RoHS Compliant) PIN1 DFN5060 D Applications Synchronou

 8.2. Size:687K  ruichips
ruh85120s.pdf pdf_icon

RUH85150R

RUH85120S N-Channel Advanced Power MOSFET Features Pin Description 85V/120A, D RDS (ON) =4.6m (Typ.)@VGS=10V Uses Ruichips advanced SGTTM technology Ultra Low On-Resistance Excellent QgxRDS(on) Product 100% Avalanche Tested 100% A l h T t d Fast Switching and Fully Avalanche Rated Lead Free and Green Devices (RoHS Compliant) G S TO263 D D D D D

 8.3. Size:280K  ruichips
ruh85100m-c.pdf pdf_icon

RUH85150R

RUH85100M-C N-Channel Advanced Power MOSFET Features Pin Description 85V/100A, RDS (ON) =6.5m (Typ.)@VGS=10V D RDS (ON) =9.5m (Typ.)@VGS=4.5V D Ultra Low On-Resistance D Fast Switching Speed D 100% Avalanche Tested Uses Ruichips advanced RUISGTTM technology G Lead Free and Green Devices (RoHS Compliant) S S S PIN1 DFN5060 D Applications Syn

Otros transistores... RUH60120L , RUH60120M , RUH6080M3-C , RUH6080R , RUH60D60M , RUH85100M-C , RUH85120M-C , RUH85120S , 5N65 , RUH85210R , RUH85230S , RUH85350T , RUQ4040M2 , H0110D , H0110K , H01H14B , H01H14D .

 

 
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