H5N50U MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: H5N50U
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 50 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua
de drenaje: 5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.5 Ohm
Encapsulados: TO-251
Búsqueda de reemplazo de H5N50U MOSFET
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H5N50U datasheet
9.1. Size:109K renesas
h5n5006ld h5n5006lm.pdf 
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
9.2. Size:111K renesas
rej03g1115 h5n5006ldlslmds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
9.3. Size:99K renesas
rej03g1116 h5n5007pds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
9.4. Size:69K renesas
rej03g0378 h5n5012p.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
9.5. Size:99K renesas
rej03g1117 h5n5015pds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
9.6. Size:153K renesas
rej03g0175 h5n5016pl.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
9.7. Size:107K renesas
rej03g0397 h5n5006dlds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
9.8. Size:169K renesas
h5n5004pl-e0-e.pdf
Preliminary Datasheet H5N5004PL-E0-E R07DS1198EJ0100 500V - 50A - MOS FET Rev.1.00 High Speed Power Switching Mar 26, 2014 Features Low on-resistance R DS (on) = 0.09 typ. (at ID = 25 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Low gate charge Avalanche ratings Built-in fast recovery diode trr = 190 ns typ Outline
9.9. Size:206K renesas
rej03g1112 h5n5001fmds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
9.10. Size:191K renesas
h5n5005pl-e0-e.pdf
Preliminary Datasheet H5N5005PL-E0-E R07DS1199EJ0300 500V - 60A - MOS FET Rev.3.00 High Speed Power Switching Mar 25, 2014 Features Low on-resistance RDS(on) = 0.070 typ. (at ID = 30 A, VGS= 10 V, Ta = 25 C) Low leakage current High speed switching Low gate charge Avalanche ratings Built-in fast recovery diode Outline RENESAS Package cod
9.11. Size:100K renesas
rej03g1114 h5n5006fmds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
9.12. Size:121K renesas
rej03g1113 h5n5004plds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
9.13. Size:154K renesas
rej03g0419 h5n5005plds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
9.14. Size:146K renesas
h5n5016pl-e0-e.pdf
Preliminary Datasheet H5N5016PL-E0-E R07DS1200EJ0100 500V - 50A - MOS FET Rev.1.00 High Speed Power Switching Mar 25, 2014 Features Low on-resistance RDS(on) = 0.108 typ. (at ID = 25 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Built-in fast recovery diode Outline RENESAS Package code PRSS0003ZC-A (Package name TO-264) D 1.
9.15. Size:1205K lonten
lnc5n50 lnd5n50 lng5n50 lnh5n50.pdf
LNC5N50 LND5N50 LNG5N50 LNH5N50 Lonten N-channel 500V, 5A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the V 500V DSS advanced planar VDMOS technology. The I 5A D resulting device has low conduction resistance, R 1.6 DS(on),max superior switching performance and high avalanche Q 12.8 nC g,typ energy. Features Low R DS(on) Low gate charge
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