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H5N60U MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: H5N60U
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 80 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 3.6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 40 nS
   Cossⓘ - Capacitancia de salida: 60 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.5 Ohm
   Paquete / Cubierta: TO-251
     - Selección de transistores por parámetros

 

H5N60U Datasheet (PDF)

 ..1. Size:412K  cn haohai electr
 h5n60u h5n60d.pdf pdf_icon

H5N60U

5N60 SeriesN-Channel MOSFET5A, 600V, N H FQU5N60C H5N60U U: TO-251 80/ 4Kpcs/ 24Kpcs5N60 HAOHAIFQD5N60C H5N60D D: TO-252 25Kpcs 2.5K/ 5Kpcs/5N60 Series Pin AssignmentFeaturesID=3.6AOri

 9.1. Size:98K  renesas
 rej03g1118 h5n6001pds.pdf pdf_icon

H5N60U

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.2. Size:408K  cn haohai electr
 h5n60p h5n60f.pdf pdf_icon

H5N60U

5N60 SeriesN-Channel MOSFET4.5A, 600V, N H FQP5N60C H5N60P P: TO-220AB5N60 HAOHAI 50Pcs 1000Pcs 5000PcsFQPF5N60C H5N60F F: TO-220FP5N60 Series Pin AssignmentFeaturesID=4.5AOriginative New De

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History: NTLJS17D0P03P8Z | CTM09N20 | DMP2200UDW | AOI418 | 3N70G-TN3-R | SST176 | IRF8714PBF-1

 

 
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