H7N60P Todos los transistores

 ..1. Size:381K  cn haohai electr
 h7n60p h7n60f.pdf

7N60 Series N-Channel MOSFET 7A, 600V, N H FQP7N60C H7N60P P TO-220AB HAOHAI 50Pcs 1000Pcs 5000Pcs 7N60 FQPF7N60C H7N60F F TO-220FP 7N60 Series Pin Assignment APPLICATION ID=7A ELECTRONIC BALLAST

 9.1. Size:912K  samsung
 ssh7n60a.pdf

Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS(on) = 1.2 Rugged Gate Oxide Technology Lower Input Capacitance ID = 7.3 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 600V Lower RDS(ON) 0.977 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Va

 9.2. Size:616K  shantou-huashan
 hfh7n60.pdf

Shantou Huashan Electronic Devices Co.,Ltd. HFH7N60 N-Channel Enhancement Mode Field Effect Transistor General Description These are N-Channel enhancement mode silicon gate power field effect transistors. TO-3P They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance

 9.3. Size:1036K  lonten
 lnc7n60d lnd7n60d lng7n60d lnh7n60d.pdf

LNC7N60D LND7N60D LNG7N60D LNH7N60D Lonten N-channel 600V, 7A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the VDSS 600V advanced planar VDMOS technology. The ID 7A resulting device has low conduction resistance, RDS(on),max 1.3 superior switching performance and high avalance Qg,typ 20.6nC energy. Features Low RDS(on) Low gate cha