NCE025N30K MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCE025N30K
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 120 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 115 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 VQgⓘ - Carga de la puerta: 71 nC
trⓘ - Tiempo de subida: 16 nS
Cossⓘ - Capacitancia de salida: 445 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0052 Ohm
Paquete / Cubierta: TO-252
Búsqueda de reemplazo de MOSFET NCE025N30K
NCE025N30K Datasheet (PDF)
nce025n30k.pdf
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NCE025N30Khttp://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE025N30K uses advanced trench technology andGeneral Featuresdesign to provide excellent R with low gate charge. It can V =30V,I =115ADS(ON) DS Dbe used in a wide variety of applications. R =2.2m (typical) @ V =10VDS(ON) GSR =3.6m (typical) @ V =4.5VApplication DS(ON) GS
nce025n30g.pdf
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NCE025N30Ghttp://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE025N30G uses advanced trench technology andGeneral Featuresdesign to provide excellent R with low gate charge. It can V =30V,I =115ADS(ON) DS Dbe used in a wide variety of applications. R =2.2m (typical) @ V =10VDS(ON) GSR =3.6m (typical) @ V =4.5VApplication DS(ON) GS
nce0250d.pdf
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Pb Free Producthttp://www.ncepower.com NCE0250DNCE N-Channel Enhancement Mode Power MOSFET Description The NCE0250D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =50A RDS(ON)
nce0224f.pdf
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http://www.ncepower.com NCE0224FNCE N-Channel Enhancement Mode Power MOSFET Description The NCE0224F uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =24A RDS(ON)
nce0240f.pdf
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Pb Free Producthttp://www.ncepower.com NCE0240FNCE N-Channel Enhancement Mode Power MOSFET Description The NCE0240F uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =40A RDS(ON)
nce0205ia.pdf
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http://www.ncepower.com NCE0205IANCE N-Channel Enhancement Mode Power MOSFET Description The NCE0205IA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Schematic diagram General Features VDS = 200V,ID =5A RDS(ON)
nce0224af.pdf
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Pb Free ProductNCE0224AFhttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0224AF uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =24A RDS(ON)
nce02p20k.pdf
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http://www.ncepower.comNCE02P20KNCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE02P20K uses advanced trench technology anddesign to provide excellent R with low gate charge. It canDS(ON)be used in a wide variety of applications.General Features V =-200V,I =-20A Schematic diagramDS DR
nce0224.pdf
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NCE0224http://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0224 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Schematic diagram General Features VDS =200V,ID =24A RDS(ON)
nce0260.pdf
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Pb Free Producthttp://www.ncepower.com NCE0260NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0260 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =60A RDS(ON)
nce0275t.pdf
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Pb Free Producthttp://www.ncepower.com NCE0275TNCE N-Channel Enhancement Mode Power MOSFET Description The NCE0275T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in automotive applications and a wide variety of other applications. General Features VDSS =200V,ID =75A Schematic diagram RDS(ON)
nce0224d.pdf
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Pb Free Producthttp://www.ncepower.com NCE0224DNCE N-Channel Enhancement Mode Power MOSFET Description The NCE0224D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =24A RDS(ON)
nce0202za.pdf
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Pb Free Producthttp://www.ncepower.com NCE0202ZANCE N-Channel Enhancement Mode Power MOSFET DDescription The NCE0202ZA uses advanced trench technology and Gdesign to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. SGeneral Features Schematic diagram VDS = 200V,ID =2A RDS(ON)
nce0208ia.pdf
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Pb Free Producthttp://www.ncepower.com NCE0208IANCE N-Channel Enhancement Mode Power MOSFET Description The NCE0208IA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =8A RDS(ON)
nce0208ka.pdf
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Pb Free Producthttp://www.ncepower.com NCE0208KANCE N-Channel Enhancement Mode Power MOSFET Description The NCE0208KA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =8A RDS(ON)
nce0260p.pdf
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Pb Free Producthttp://www.ncepower.com NCE0260PNCE N-Channel Enhancement Mode Power MOSFET Description The NCE0260P uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =60A RDS(ON)
nce0202m.pdf
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http://www.ncepower.com NCE0202MNCE N-Channel Enhancement Mode Power MOSFET Description The NCE0202M uses advanced trench technology and Ddesign to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GGeneral Features VDS = 200V,ID =2A SRDS(ON)
nce0203s.pdf
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Pb Free Producthttp://www.ncepower.com NCE0203SNCE N-Channel Enhancement Mode Power MOSFET Description The NCE0203S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =3.9A RDS(ON)
nce020n30k.pdf
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Pb Free Producthttp://www.ncepower.comNCE020N30KNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE020N30K uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =30V,I =180ADS DR =1.9 m @ V =10V (Typ) Schematic diagramDS(ON) GSR =2.6 m @ V =4.5V
nce0224a.pdf
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Pb Free ProductNCE0224Ahttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0224A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =24A RDS(ON)
nce0224da.pdf
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Pb Free Producthttp://www.ncepower.com NCE0224DANCE N-Channel Enhancement Mode Power MOSFET Description The NCE0224DA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =24A RDS(ON)
nce0224k.pdf
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Pb Free Producthttp://www.ncepower.com NCE0224KNCE N-Channel Enhancement Mode Power MOSFET Description The NCE0224K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =24A RDS(ON)
nce0275d.pdf
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http://www.ncepower.comNCE0275DNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE0275D uses advanced trench technology and designto provide excellent R with low gate charge. It can be usedDS(ON)in automotive applications and a wide variety of otherapplications.General Features V =200V,I =75A Schematic diagramDSS DR
nce0224ak.pdf
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Pb Free ProductNCE0224AKhttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0224AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =24A RDS(ON)
nce0240.pdf
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Pb Free Producthttp://www.ncepower.com NCE0240NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0240 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =40A RDS(ON)
nce0260t.pdf
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Pb Free Producthttp://www.ncepower.com NCE0260TNCE N-Channel Enhancement Mode Power MOSFET Description The NCE0260T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =60A RDS(ON)
nce0275.pdf
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http://www.ncepower.comNCE0275NCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE0275 uses advanced trench technology and design toprovide excellent R with low gate charge. It can be used inDS(ON)automotive applications and a wide variety of otherapplications.General Features V =200V,I =75A Schematic diagramDSS DR
nce0270t.pdf
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http://www.ncepower.comNCE0270TNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE0270T uses advanced trench technology and designto provide excellent R with low gate charge. It can beDS(ON)used in a wide variety of applications.General Features V =200V,I =70ADS DR
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: DAMIA1100N100 | DAMI660N60 | DAMI560N100 | DAMI500N60 | DAMI450N100 | DAMI360N150 | DAMI330N60 | DAMI320N100 | DAMI300N150 | DAMI280N200 | DAMI220N200 | DAMI220N150 | DAMI160N200 | DAMI160N100 | DAMH75N500H | DAMH560N100