NCE1230SP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCE1230SP
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 4 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 12 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
|Id|ⓘ - Corriente continua de drenaje: 30 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(off)|ⓘ - Voltaje de corte de la puerta: 0.5 V
Qgⓘ - Carga de la puerta: 84.3 nC
trⓘ - Tiempo de subida: 4000 nS
Cossⓘ - Capacitancia de salida: 944 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0013 Ohm
Paquete / Cubierta: CSP3.0X2.74
Búsqueda de reemplazo de MOSFET NCE1230SP
NCE1230SP Datasheet (PDF)
nce1230sp.pdf
http://www.ncepower.comNCE1230SPNCE Common-Drain Dual N-Channel Enhancement Mode Field Effect TransistorDescriptionGeneral FeaturesThe NCE1230SP uses advanced trench technology to provide V =12V,I =30ASSS Sexcellent R , low gate charge and operation with gateSS(ON)R on =1.0m (typical) @ V =4.5VSS( ) GSvoltages as low as 2.5V while retaining a 8V V rating. It isGS(
nce1205.pdf
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nce12p09s.pdf
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nce120ed120vtp4.pdf
NCE120ED120VTP41200V, 120A, Trench FS Gen.7 IGBTGeneral DescriptionUsing NCE's proprietary high density trench gate design and advanced FS(Field Stop) Gen.7 technology, the 1200V Trench Field Stop Gen.7 IGBT offerssuperior conduction and switching performances, and easy parallel operation;Features Trench Field Stop Gen.7 Technology Offering Low saturation voltage: V = 1.60
nce1227sp.pdf
http://www.ncepower.com NCE1227SPNCE Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor Description General Features The NCE1227SP uses advanced trench technology to provide VSSS =12V,IS =27A excellent RSS(ON), low gate charge and operation with gate RSS(on)=2.1m (typical) @ VGS=4.5V voltages as low as 2.5V while retaining a 8V VGS(MAX) rating. It is
nce120ed120vtp.pdf
NCE120ED120VTP1200V, 120A, Trench FS Gen.7 IGBTGeneral DescriptionUsing NCE's proprietary high density trench gate design and advanced FS(Field Stop) Gen.7 technology, the 1200V Trench Field Stop Gen.7 IGBT offerssuperior conduction and switching performances, and easy parallel operation;Features Trench Field Stop Gen.7 Technology Offering Low saturation voltage: V = 1.60V
nce1216.pdf
Pb Free Producthttp://www.ncepower.com NCE1216NCE P-Channel Enhancement Mode Power MOSFET Description DThe NCE1216 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages .This device is suitable for use as a load switching application and a wide variety of other applications. SGeneral Features Schematic diagram
nce1220sp.pdf
http://www.ncepower.com NCE1220SPNCE Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor Description General Features The NCE1220SP uses advanced trench technology to provide VSSS =12V,IS =20A excellent RSS(ON), low gate charge and operation with gate RSS(on)=3.6m (typical) @ VGS=4.5V voltages as low as 2.5V while retaining a 10V VGS(MAX) rating. It is
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