NCE20ND08U Todos los transistores

 

NCE20ND08U MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCE20ND08U
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.7 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 12 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 5.5 nS
   Cossⓘ - Capacitancia de salida: 250 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0074 Ohm
   Paquete / Cubierta: DFN2X3-6L
 

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NCE20ND08U Datasheet (PDF)

 ..1. Size:640K  ncepower
 nce20nd08u.pdf pdf_icon

NCE20ND08U

NCE20ND08Uhttp://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE20ND08U uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =20V,I =12ADS DR

 6.1. Size:754K  ncepower
 nce20nd07u.pdf pdf_icon

NCE20ND08U

http://www.ncepower.comNCE20ND07UNCE N-Channel Enhancement Mode Power MOSFETGeneral FeaturesDescription V = 20V,I =7ADS DThe NCE20ND07U uses advanced trench technology and designR

 6.2. Size:322K  ncepower
 nce20nd06.pdf pdf_icon

NCE20ND08U

Pb Free Producthttp://www.ncepower.com NCE20ND06NCE N-Channel Enhancement Mode Power MOSFET Description The NCE20ND06 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. Schematic diagram General Features V

 7.1. Size:650K  ncepower
 nce20nd15q.pdf pdf_icon

NCE20ND08U

NCE20ND15Qhttp://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE20ND15Q uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.It is ESDprotected.General Features V =20V,I =15ADS DR = 3.6m @ V =4.5VDS(ON) GSSchematic diagramR = 3.7m @ V =4VDS

MOSTRAR MÁS

Otros transistores... NCE18ND11U , NCE2004NE , NCE2006NE , NCE2007NS , NCE2008E , NCE2008N , NCE20ND06 , NCE20ND07U , IRFP250 , NCE20ND15Q , NCE20PD05 , NCE25P60K , NCE3068Q , NCE30H10BK , NCE30H28 , NCE30ND07BS , NCE30PD08S .

History: IRFR3710ZTR

 

 
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