NCE20ND08U Todos los transistores

 

NCE20ND08U MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE20ND08U

Código: 20ND08U

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.7 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 12 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

|VGSth|ⓘ - Tensión umbral entre puerta y fuente: 1 V

Qgⓘ - Carga de la puerta: 17 nC

trⓘ - Tiempo de subida: 5.5 nS

Cossⓘ - Capacitancia de salida: 250 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0074 Ohm

Encapsulados: DFN2X3-6L

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NCE20ND08U datasheet

 ..1. Size:640K  ncepower
 nce20nd08u.pdf pdf_icon

NCE20ND08U

NCE20ND08U http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE20ND08U uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =20V,I =12A DS D R

 6.1. Size:754K  ncepower
 nce20nd07u.pdf pdf_icon

NCE20ND08U

http //www.ncepower.com NCE20ND07U NCE N-Channel Enhancement Mode Power MOSFET General Features Description V = 20V,I =7A DS D The NCE20ND07U uses advanced trench technology and design R

 6.2. Size:322K  ncepower
 nce20nd06.pdf pdf_icon

NCE20ND08U

Pb Free Product http //www.ncepower.com NCE20ND06 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE20ND06 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. Schematic diagram General Features V

 7.1. Size:650K  ncepower
 nce20nd15q.pdf pdf_icon

NCE20ND08U

NCE20ND15Q http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE20ND15Q uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications.It is ESD protected. General Features V =20V,I =15A DS D R = 3.6m @ V =4.5V DS(ON) GS Schematic diagram R = 3.7m @ V =4V DS

MOSTRAR MÁS

Otros transistores... NCE18ND11U , NCE2004NE , NCE2006NE , NCE2007NS , NCE2008E , NCE2008N , NCE20ND06 , NCE20ND07U , AON7506 , NCE20ND15Q , NCE20PD05 , NCE25P60K , NCE3068Q , NCE30H10BK , NCE30H28 , NCE30ND07BS , NCE30PD08S .

 

 

 

 

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