NCE3068Q Todos los transistores

 ..1. Size:833K  ncepower
 nce3068q.pdf

http //www.ncepower.com NCE3068Q NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3068Q uses advanced trench technology and design General Features to provide excellent R with low gate charge. It can be V =30V,I =68A DS(ON) DS D used in a wide variety of applications. R =3.5m (max) @ V =10V DS(ON) GS R =6.2m (max) @ V =4.5V Application DS(ON) GS DC/DC Conve

 8.1. Size:664K  ncepower
 nce3065g.pdf

http //www.ncepower.com NCE3065G NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3065G uses advanced trench technology and design General Features to provide excellent R with low gate charge. It can be V =30V,I =65A DS(ON) DS D used in a wide variety of applications. R =5.7m (typical) @ V =10V DS(ON) GS R =7.7m (typical) @ V =4.5V Application DS(ON) GS DC/

 8.2. Size:723K  ncepower
 nce3065q.pdf

http //www.ncepower.com NCE3065Q NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3065Q uses advanced trench technology and design General Features to provide excellent R with low gate charge. It can be V =30V,I =65A DS(ON) DS D used in a wide variety of applications. R =4.2m (typical) @ V =10V DS(ON) GS R =6.7m (typical) @ V =4.5V Application DS(ON) GS DC/

 8.3. Size:429K  ncepower
 nce3065k.pdf

http //www.ncepower.com NCE3065K NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3065K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =65A RDS(ON)