NCE3068Q Todos los transistores

 

NCE3068Q MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCE3068Q
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 45 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 68 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.2 V
   Qgⓘ - Carga de la puerta: 38.4 nC
   trⓘ - Tiempo de subida: 6 nS
   Cossⓘ - Capacitancia de salida: 266 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0075 Ohm
   Paquete / Cubierta: PDFN3.3X3.3-8L
 

 Búsqueda de reemplazo de NCE3068Q MOSFET

   - Selección ⓘ de transistores por parámetros

 

NCE3068Q Datasheet (PDF)

 ..1. Size:833K  ncepower
 nce3068q.pdf pdf_icon

NCE3068Q

http://www.ncepower.comNCE3068QNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE3068Q uses advanced trench technology and designGeneral Featuresto provide excellent R with low gate charge. It can be V =30V,I =68ADS(ON) DS Dused in a wide variety of applications. R =3.5m (max) @ V =10VDS(ON) GSR =6.2m (max) @ V =4.5VApplication DS(ON) GS DC/DC Conve

 8.1. Size:664K  ncepower
 nce3065g.pdf pdf_icon

NCE3068Q

http://www.ncepower.comNCE3065GNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE3065G uses advanced trench technology and designGeneral Featuresto provide excellent R with low gate charge. It can be V =30V,I =65ADS(ON) DS Dused in a wide variety of applications. R =5.7m (typical) @ V =10VDS(ON) GSR =7.7m (typical) @ V =4.5VApplication DS(ON) GS DC/

 8.2. Size:723K  ncepower
 nce3065q.pdf pdf_icon

NCE3068Q

http://www.ncepower.comNCE3065QNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE3065Q uses advanced trench technology and designGeneral Featuresto provide excellent R with low gate charge. It can be V =30V,I =65ADS(ON) DS Dused in a wide variety of applications. R =4.2m (typical) @ V =10VDS(ON) GSR =6.7m (typical) @ V =4.5VApplication DS(ON) GS DC/

 8.3. Size:429K  ncepower
 nce3065k.pdf pdf_icon

NCE3068Q

http://www.ncepower.com NCE3065KNCE N-Channel Enhancement Mode Power MOSFET Description The NCE3065K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =65A RDS(ON)

MOSTRAR MÁS

Otros transistores... NCE2008E , NCE2008N , NCE20ND06 , NCE20ND07U , NCE20ND08U , NCE20ND15Q , NCE20PD05 , NCE25P60K , P60NF06 , NCE30H10BK , NCE30H28 , NCE30ND07BS , NCE30PD08S , NCE3404X , NCE4003A , NCE40H14 , NCE40ND25Q .

History: SSP7464N | IRFAC32

 

 
Back to Top

 


 
.