NCE3404X MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: NCE3404X
   Código: 3404X
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 5.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.2 V
   Qgⓘ - Carga de la puerta: 10 nC
   trⓘ - Tiempo de subida: 4.5 nS
   Cossⓘ - Capacitancia de salida: 91 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.05 Ohm
   Paquete / Cubierta: SOT-23

Búsqueda de reemplazo de MOSFET NCE3404X

NCE3404X Datasheet (PDF)

..1. Size:812K ncepower
nce3404x.pdf

http://www.ncepower.comNCE3404XNCE N-Channel Enhancement Mode Power MOSFETDescriptionDThe NCE3404X uses advanced trench technology to provideexcellent R , low gate charge and operation with gateDS(ON)Gvoltages as low as 4.5V. This device is suitable for use as aBattery protection or in other Switching application.SSchematic diagramGeneral Features V = 30V,I = 5.8A

7.1. Size:253K ncepower
nce3404y.pdf

http://www.ncepower.com NCE3404YNCE N-Channel Enhancement Mode Power MOSFET DDescription The NCE3404Y uses advanced trench technology to provide Gexcellent RDS(ON) and low gate charge.This device is suitable for use as a load switch and PWM applications. SGenera Features Schematic diagram VDS = 30V,ID = 5.8A RDS(ON)

7.2. Size:321K ncepower
nce3404.pdf

Pb Free Producthttp://www.ncepower.com NCE3404NCE N-Channel Enhancement Mode Power MOSFET Description DThe NCE3404 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.This device is suitable Gfor use as a load switch and PWM applications. SGenera Features VDS = 30V,ID = 5.8A Schematic diagram RDS(ON)

7.3. Size:895K cn vbsemi
nce3404.pdf

NCE3404www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-23)G

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

Liste

Recientemente añadidas las descripciónes de los transistores: