NCE3404X Todos los transistores

 

NCE3404X MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE3404X

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.3 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 5.8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 4.5 nS

Cossⓘ - Capacitancia de salida: 91 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.05 Ohm

Encapsulados: SOT-23

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NCE3404X datasheet

 ..1. Size:812K  ncepower
nce3404x.pdf pdf_icon

NCE3404X

http //www.ncepower.com NCE3404X NCE N-Channel Enhancement Mode Power MOSFET Description D The NCE3404X uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON) G voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. S Schematic diagram General Features V = 30V,I = 5.8A

 7.1. Size:253K  ncepower
nce3404y.pdf pdf_icon

NCE3404X

http //www.ncepower.com NCE3404Y NCE N-Channel Enhancement Mode Power MOSFET D Description The NCE3404Y uses advanced trench technology to provide G excellent RDS(ON) and low gate charge.This device is suitable for use as a load switch and PWM applications. S Genera Features Schematic diagram VDS = 30V,ID = 5.8A RDS(ON)

 7.2. Size:321K  ncepower
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NCE3404X

 7.3. Size:895K  cn vbsemi
nce3404.pdf pdf_icon

NCE3404X

NCE3404 www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.030 at VGS = 10 V TrenchFET Power MOSFET 6.5 30 4.5 nC 100 % Rg Tested 0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converter D TO-236 (SOT-23) G

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