NCE40H14 Todos los transistores

 

NCE40H14 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE40H14

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 135 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 140 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 16 nS

Cossⓘ - Capacitancia de salida: 562 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.005 Ohm

Encapsulados: TO-220

 Búsqueda de reemplazo de NCE40H14 MOSFET

- Selecciónⓘ de transistores por parámetros

 

NCE40H14 datasheet

 ..1. Size:772K  ncepower
nce40h14.pdf pdf_icon

NCE40H14

NCE40H14 http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE40H14 uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =40V,I =140A DS D R

 7.1. Size:669K  ncepower
nce40h10k.pdf pdf_icon

NCE40H14

NCE40H10K http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE40H10K uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =40V,I =100A DS D Schematic diagram R

 7.2. Size:753K  ncepower
nce40h11k.pdf pdf_icon

NCE40H14

Pb Free Product NCE40H11K http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE40H11K uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =40V,I =110A DS D Schematic diagram R

 7.3. Size:401K  ncepower
nce40h12.pdf pdf_icon

NCE40H14

Pb Free Product NCE40H12 http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE40H12 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =120A RDS(ON)

Otros transistores... NCE25P60K , NCE3068Q , NCE30H10BK , NCE30H28 , NCE30ND07BS , NCE30PD08S , NCE3404X , NCE4003A , 5N60 , NCE40ND25Q , NCE4606C , NCE4612SP , NCE4614B , NCE4614C , NCE4618SP , NCE4953A , NCE50N540F .

 

 

 


🌐 : EN  ES  РУ

social

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: AUN084N10 | AUN065N10 | AUN063N10 | AUN062N08BG | AUN060N08AG | AUN053N10 | AUN050N08BGL | AUN045N085 | AUN042N055 | AUN036N10 | AUD069N10A | AUD062N08BG | AUD060N08AG | AUD060N055 | AUD056N08BGL | AUB062N08BG

 

 

 

Popular searches

2sc1943 | 7408 mosfet | cs630 | 2sc2705 transistor | 647 transistor | d525 transistor | 2sc1583 | g60t60an3h

 

 

↑ Back to Top
.