NCE40H14 Todos los transistores

 

NCE40H14 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCE40H14
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 135 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 140 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 16 nS
   Cossⓘ - Capacitancia de salida: 562 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.005 Ohm
   Paquete / Cubierta: TO-220
 

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NCE40H14 Datasheet (PDF)

 ..1. Size:772K  ncepower
 nce40h14.pdf pdf_icon

NCE40H14

NCE40H14http://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE40H14 uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =40V,I =140ADS DR

 7.1. Size:669K  ncepower
 nce40h10k.pdf pdf_icon

NCE40H14

NCE40H10Khttp://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE40H10K uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =40V,I =100ADS DSchematic diagramR

 7.2. Size:753K  ncepower
 nce40h11k.pdf pdf_icon

NCE40H14

Pb Free ProductNCE40H11Khttp://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE40H11K uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =40V,I =110ADS DSchematic diagramR

 7.3. Size:401K  ncepower
 nce40h12.pdf pdf_icon

NCE40H14

Pb Free ProductNCE40H12http://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE40H12 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =120A RDS(ON)

MOSTRAR MÁS

Otros transistores... NCE25P60K , NCE3068Q , NCE30H10BK , NCE30H28 , NCE30ND07BS , NCE30PD08S , NCE3404X , NCE4003A , 13N50 , NCE40ND25Q , NCE4606C , NCE4612SP , NCE4614B , NCE4614C , NCE4618SP , NCE4953A , NCE50N540F .

History: IPA60R160C6 | FQA36P15F109

 

 
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