NCE4606C Todos los transistores

 

NCE4606C MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE4606C

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 3 nS

Cossⓘ - Capacitancia de salida: 81 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.044 Ohm

Encapsulados: SOP-8

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NCE4606C datasheet

 ..1. Size:1122K  ncepower
 nce4606c.pdf pdf_icon

NCE4606C

http //www.ncepower.com NCE4606C N and P-Channel Enhancement Mode Power MOSFET Description The NCE4606C uses advanced trench technology to provide excellent R and low gate charge . The complementary DS(ON) MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. N-channel P-channel General Features N-Channel Schematic diagram V = 30V,I

 7.1. Size:397K  ncepower
 nce4606b.pdf pdf_icon

NCE4606C

http //www.ncepower.com NCE4606B N and P-Channel Enhancement Mode Power MOSFET Description The NCE4606B uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. N-channel P-channel General Features N-Channel Schematic diagram VDS

 7.2. Size:423K  ncepower
 nce4606a.pdf pdf_icon

NCE4606C

http //www.ncepower.com NCE4606A N and P-Channel Enhancement Mode Power MOSFET Description The NCE4606A uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-channel P-channel N-Channel VDS = 30V,ID =6.5A Sc

 7.3. Size:434K  ncepower
 nce4606.pdf pdf_icon

NCE4606C

Pb Free Product http //www.ncepower.com NCE4606 N and P-Channel Enhancement Mode Power MOSFET Description The NCE4606 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-channel P-channel N-Channel VDS =

MOSTRAR MÁS

Otros transistores... NCE30H10BK , NCE30H28 , NCE30ND07BS , NCE30PD08S , NCE3404X , NCE4003A , NCE40H14 , NCE40ND25Q , SI2302 , NCE4612SP , NCE4614B , NCE4614C , NCE4618SP , NCE4953A , NCE50N540F , NCE50NF220D , NCE6004 .

History: CHM3120JGP | BUK6E2R3-40C | NCE3404X

 

 

 

 

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