NCE4606C MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCE4606C
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 6 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 3 nS
Cossⓘ - Capacitancia de salida: 81 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.044 Ohm
Paquete / Cubierta: SOP-8
Búsqueda de reemplazo de NCE4606C MOSFET
NCE4606C Datasheet (PDF)
nce4606c.pdf

http://www.ncepower.comNCE4606CN and P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE4606C uses advanced trench technology to provideexcellent R and low gate charge . The complementaryDS(ON)MOSFETs may be used to form a level shifted high sideswitch, and for a host of other applications.N-channel P-channelGeneral Features N-Channel Schematic diagramV = 30V,I
nce4606b.pdf

http://www.ncepower.com NCE4606BN and P-Channel Enhancement Mode Power MOSFET Description The NCE4606B uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. N-channel P-channelGeneral Features N-Channel Schematic diagram VDS
nce4606a.pdf

http://www.ncepower.com NCE4606AN and P-Channel Enhancement Mode Power MOSFET Description The NCE4606A uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-channel P-channel N-Channel VDS = 30V,ID =6.5A Sc
nce4606.pdf

Pb Free Producthttp://www.ncepower.com NCE4606N and P-Channel Enhancement Mode Power MOSFET Description The NCE4606 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-channel P-channel N-Channel VDS =
Otros transistores... NCE30H10BK , NCE30H28 , NCE30ND07BS , NCE30PD08S , NCE3404X , NCE4003A , NCE40H14 , NCE40ND25Q , IRFZ46N , NCE4612SP , NCE4614B , NCE4614C , NCE4618SP , NCE4953A , NCE50N540F , NCE50NF220D , NCE6004 .
History: UTT30P06G-TF3-T | SFG12R12GF | FQA28N50 | BUK445-600B | AONY36352 | IRF7506PBF | IRFP4468
History: UTT30P06G-TF3-T | SFG12R12GF | FQA28N50 | BUK445-600B | AONY36352 | IRF7506PBF | IRFP4468



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