NCE4614C MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

NCE4614C datasheet

..1. Size:1011K ncepower
nce4614c.pdf pdf_icon

http //www.ncepower.com NCE4614C N and P-Channel Enhancement Mode Power MOSFET Description The NCE4614C uses advanced trench technology to provide excellent R and low gate charge. The complementary DS(ON) MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. N-channel P-channel Schematic diagram General Features N-Channel V =40V,I

7.1. Size:1021K ncepower
nce4614b.pdf pdf_icon

http //www.ncepower.com NCE4614B N and P-Channel Enhancement Mode Power MOSFET Description The NCE4614B uses advanced trench technology to provide excellent R and low gate charge . The complementary DS(ON) MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. N-channel P-channel Schematic diagram General Features N-Channel V =40V,I

7.2. Size:531K ncepower
nce4614.pdf pdf_icon

Pb Free Product http //www.ncepower.com NCE4614 N and P-Channel Enhancement Mode Power MOSFET Description The NCE4614 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-channel P-channel N-Channel VDS =4

8.1. Size:575K ncepower
nce4612sp.pdf pdf_icon

http //www.ncepower.com NCE4612SP NCE Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor Description General Features The NCE4612SP uses advanced trench technology to provide V =24V,I =6A SSS S excellent R , low gate charge and operation with gate SS(ON) 2.5V drive voltages as low as 2.5V while retaining a 12V V rating. It GS(MAX) Common-drain type is ES