NCE4614C MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCE4614C
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 4 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 4 nS
Cossⓘ - Capacitancia de salida: 46 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.063 Ohm
Paquete / Cubierta: SOP-8
Búsqueda de reemplazo de NCE4614C MOSFET
NCE4614C Datasheet (PDF)
nce4614c.pdf

http://www.ncepower.comNCE4614CN and P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE4614C uses advanced trench technology to provideexcellent R and low gate charge. The complementaryDS(ON)MOSFETs may be used to form a level shifted high sideswitch, and for a host of other applications.N-channelP-channelSchematic diagramGeneral Features N-ChannelV =40V,I
nce4614b.pdf

http://www.ncepower.comNCE4614BN and P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE4614B uses advanced trench technology to provideexcellent R and low gate charge . The complementaryDS(ON)MOSFETs may be used to form a level shifted high sideswitch, and for a host of other applications.N-channelP-channelSchematic diagramGeneral Features N-ChannelV =40V,I
nce4614.pdf

Pb Free Producthttp://www.ncepower.com NCE4614N and P-Channel Enhancement Mode Power MOSFET Description The NCE4614 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-channel P-channel N-Channel VDS =4
nce4612sp.pdf

http://www.ncepower.comNCE4612SPNCE Common-Drain Dual N-Channel Enhancement Mode Field Effect TransistorDescription General FeaturesThe NCE4612SP uses advanced trench technology to provide V =24V,I =6ASSS Sexcellent R , low gate charge and operation with gateSS(ON) 2.5V drivevoltages as low as 2.5V while retaining a 12V V rating. ItGS(MAX) Common-drain typeis ES
Otros transistores... NCE30PD08S , NCE3404X , NCE4003A , NCE40H14 , NCE40ND25Q , NCE4606C , NCE4612SP , NCE4614B , 2N60 , NCE4618SP , NCE4953A , NCE50N540F , NCE50NF220D , NCE6004 , NCE60ND09AS , NCE60ND18G , NCE60ND20AK .
History: SFG100N10PF | IRF7749L1TRPBF | MSU9N90P | NCEP035N60AG | MTB070P15J3 | JFPC12N65C | SMOS48N50
History: SFG100N10PF | IRF7749L1TRPBF | MSU9N90P | NCEP035N60AG | MTB070P15J3 | JFPC12N65C | SMOS48N50



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