NCE60ND18G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: NCE60ND18G
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 45 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 18 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 2.6 nS
   Cossⓘ - Capacitancia de salida: 61.2 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.032 Ohm
   Paquete / Cubierta: DFN5X6-8L

Búsqueda de reemplazo de MOSFET NCE60ND18G

NCE60ND18G Datasheet (PDF)

..1. Size:684K ncepower
nce60nd18g.pdf

Pb Free Producthttp://www.ncepower.comNCE60ND18GNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE60ND18G uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =60V,I =18ADS DSchematic diagramR

7.1. Size:643K ncepower
nce60nd03n.pdf

http://www.ncepower.comNCE60ND03NNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE60ND03N uses advanced trench technology toprovide excellent R , low gate charge and operation withDS(ON)gate voltages as low as 2.5V. This device is suitable for use asSchematic diagrama Battery protection or in other switching application.General Features V =60V,I =3ADS DR

7.2. Size:616K ncepower
nce60nd45ag.pdf

NCE60ND45AGhttp://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE60ND45AG uses advanced trench technology andGeneral Featuresdesign to provide excellent R with low gate charge. It can V =60V,I =45ADS(ON) DS Dbe used in a wide variety of applications. R =9.4m (typical) @ V =10VDS(ON) GSR =13.4m (typical) @ V =4.5VApplication DS(ON) GS

7.3. Size:614K ncepower
nce60nd45xg.pdf

NCE60ND45XGhttp://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETGeneral FeaturesDescription V = 60V,I =45ADS DThe NCE60ND45XG uses advanced trench technology andR

7.4. Size:405K ncepower
nce60nd08s.pdf

http://www.ncepower.com NCE60ND08S NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60ND08S uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V = 60V,I =8A DS DR

7.5. Size:341K ncepower
nce60nd45g.pdf

NCE60ND45Ghttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60ND45G uses advanced trench technology and General Features design to provide excellent RDS(ON) with low gate charge. It VDS = 60V,ID =45A can be used in a wide variety of applications. RDS(ON)

7.6. Size:659K ncepower
nce60nd03s.pdf

http://www.ncepower.comNCE60ND03SNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE60ND03S uses advanced trench technology toprovide excellent R , low gate charge and operation withDS(ON)gate voltages as low as 2.5V. This device is suitable for use asSchematic diagrama Battery protection or in other switching application.General Features V =60V,I =3ADS DR

7.7. Size:416K ncepower
nce60nd09as.pdf

NCE60ND09AShttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60ND09AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 60V,ID =9A Schematic diagram RDS(ON)

7.8. Size:658K ncepower
nce60nd20ak.pdf

Pb Free Producthttp://www.ncepower.comNCE60ND20AKNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE60ND20AK uses advanced trench technologyand design to provide excellent R with low gateDS(ON)charge. It can be used in a wide variety of applications.General Features V =60V,I =20A Schematic diagramDS DR

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